Published July 11, 2025 | Version v1
Journal article Open

Emerging avalanche field-effect transistors based on two-dimensional semiconductor materials and their sensory applications

Authors/Creators

  • 1. Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Czech Republic
  • 2. Department of AI Convergence Electronic Engineering, Sejong University, Seoul, Republic of Korea
  • 3. Chair of Smart Sensor Systems, University of Wuppertal, Wuppertal, Germany
  • 4. University of Chemistry and Technology Prague, Czech Republic
  • 5. Department of Chemistry, College of Science, King Khalid University, Abha, Saudi Arabia
  • 6. Czech Technical University in Prague (CTU), Prague, Czechia; National University of Sciences and Technology (NUST), Islamabad, Pakistan

Description

Two-dimensional (2D) layered semiconductors offer unique electronic and optoelectronic properties (high carrier mobility, tunable band gaps, atomic thickness) that are advantageous for avalanche field-effect transistors (FETs) and sensors. This review surveys avalanche phenomena (impact ionization, breakdown field, carrier multiplication) in 2D-material FETs and photodetectors, highlights device architectures (e.g., MoS2, WSe2, heterostructures such as WSe2/MoS2, WSe2/WS2), and summarizes figures of merit (responsivity, detectivity, EQE, gain) relevant to photo-, bio- and gas-sensing. We discuss thickness/channel-length effects, contact barriers, temperature dependence, and approaches to reduce breakdown voltage, as well as opportunities and challenges toward practical, low-bias, high-gain avalanche devices for sensing and imaging applications.

Files

d5tc02021b.pdf

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Additional details

Identifiers

DOI
10.1039/d5tc02021b

Funding

Ministry of Education Youth and Sports
Advanced Multiscale Materials for Key Enabling Technologies CZ.02.01.01/00/22_008/0004558