SnSe Semiconductor Films: Sputtering and Analysis of the Effects of Substrate Temperature on Their Optical Properties

This study examined the preparation of SnSe semiconductor films using thermal sputtering on glass slides, while examining the effects of temperature (100-300)°C and pressure (1-1.5) bar on their properties. Optical results (using UV-VIS) showed a gradual improvement in light transmission and film quality with increasing temperature, indicating a reduction in structural defects. At low temperatures (100)°C, the absorbance was high due to defects, while transparency improved at 150°C. Temperatures 200 and 250°C showed greater crystalline regularity. At 300°C, the absorbance reflected typical semiconductor behavior, demonstrating the effect of temperature on the energy bandgap and atomic rearrangement, enhancing their suitability for advanced optical and electronic applications such as lasers and solar cells.