Published June 12, 2025 | Version v1
Preprint Open

Electrical Transport of Nb-Doped MoS2 Homojunction P-N Diode: Investigating NDR and Avalanche Effect

Authors/Creators

  • 1. University of Chemistry and Technology Prague
  • 2. Sejong University, South Korea
  • 3. University of Wuppertal, Germany
  • 4. Lukasiewicz Research Network, Poland

Description

This preprint presents the electrical transport and optoelectronic characteristics of Nb-doped MoS2 homojunction p–n diodes, investigating negative differential resistance and avalanche effects. The manuscript is provided as a PDF.

Files

Manuscript_NDR_Avalanche.pdf

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Additional details

Funding

Ministry of Education Youth and Sports
Advanced Multiscale Materials for Key Enabling Technologies CZ.02.01.01/00/22_008/0004558