Study of Characteristics Curves Top-Gated Graphene FET Using SILVACO TCAD

Chowdhury, Md. Iqbal Bahar

doi:10.5281/zenodo.15319750

Published December 1, 2017 | Version v1

Journal article Open

Study of Characteristics Curves Top-Gated Graphene FET Using SILVACO TCAD

Chowdhury, Md. Iqbal Bahar¹

1. United International University

This work presents a SILVACO TCAD based fabrication and device simulation of a topgated graphene field-effect transistor. Effects of channel length and channel doping concentrations on the characteristics curves (transfer and output characteristics) of the GFET are also investigated and analyzed physically to obtain more physical insight.

Files

2017_Jrnl_Electronic_Design_Engineering_StudyofCharacteristicsCurvesTopGatedGrapheneFET.pdf

Files (956.1 kB)

Name	Size	Download all
2017_Jrnl_Electronic_Design_Engineering_StudyofCharacteristicsCurvesTopGatedGrapheneFET.pdf md5:d6ac831a228a9f384bb59c6c35fbfd60	956.1 kB	Preview Download

Additional details

Accepted: 2017-12-01

Views

Downloads

Show more details

	All versions	This version
Views	89	89
Downloads	27	27
Data volume	27.7 MB	27.7 MB

More info on how stats are collected....

DOI

Resource type

Journal article

Publisher

Zenodo

Published in

Journal of Electronic Design Engineering, 3(3), 1-9, 2017.

Languages

English

License: Creative Commons Attribution 4.0 International

The Creative Commons Attribution license allows re-distribution and re-use of a licensed work on the condition that the creator is appropriately credited. Read more

Technical metadata

Created: May 1, 2025
Modified: May 1, 2025

Study of Characteristics Curves Top-Gated Graphene FET Using SILVACO TCAD

Authors/Creators

Description

Files

2017_Jrnl_Electronic_Design_Engineering_StudyofCharacteristicsCurvesTopGatedGrapheneFET.pdf

Files (956.1 kB)

Additional details

Dates