A NOVEL CYLINDRICAL GATE ALL AROUND MOSFET USING INAS AS CHANNEL AND HFO2 AS GATE OXIDE

Recently InAs-based MOSFETs draw the researchers’ attention owing to their improved overall performance over their Si-based counterparts. Suitable high-k dielectrics such as Al2O3, HfO2 etc. are proposed as gate oxide to further enhance their performances. Such combinations (InAs-based channel and high-k dielectrics as gate oxide) are investigated in the literature for the single-gate to multiple gate MOSFETs, but not for the Gate-All-Around (GAA) MOSFETs. This work aims to make an investigative performance evaluation for an InAs/ HfO2-based cylindrical GAA MOSFET. In doing so, a GAA structure is proposed with InAs as the nanowire material and HfO2 as gate oxide material. Improved results in the various aspects such as the maximum current, inverse sub-threshold slope and maximum transconductance in comparison with InAs/SiO2 and Si/SiO2-based GAA structures show that the proposed combination possesses a great promise in the future high-performance MOSFETs.