Published June 16, 2024
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Electro-Optic Modulator in Thin-Film Lithium Niobate Foundry Process
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Description
The characterization of thin-film lithium niobate modulators with electro-optical bandwidth higher than 50 GHz is presented. The devices, operating in the telecom C-band, are manufactured in a standard foundry process following design rules. The 7.95 mm long modulator has a half-wave voltage of 3.2 V and an extinction ratio of 15.4 dB. We also show that modulators, with the same design but fabricated in different wafers, present very similar performances, corroborating the reliability of the process design kit (PDK) component and the manufacturing process.
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2024-06_ECIO2024_TFLN_modulators_CSEM_Final.pdf
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Additional details
Funding
- European Commission
- SPRINTER - Low-coSt and energy-efficient hybrid Photonic integrated circuits for fibeR-optic, free-space optIcal and mmWave commuNication systems supporting Time critical networking in industrial EnviRonments 101070581
- European Commission
- PATTERN - Next generation ultra-high-speed microwave Photonic integrATed circuiTs using advancE hybRid iNtegration 101070506
- European Commission
- LOLIPOP - Lithium NiObate empowered siLIcon nitride Platform for fragmentation free OPeration in the visible and the NIR 101070441
- European Commission
- ELENA - European electro-optic and nonlinear PIC platform based on lithium niobate 101016138