Published June 16, 2024 | Version v1
Conference proceeding Open

Electro-Optic Modulator in Thin-Film Lithium Niobate Foundry Process

Description

The characterization of thin-film lithium niobate modulators with electro-optical bandwidth higher than 50 GHz is presented. The devices, operating in the telecom C-band, are manufactured in a standard foundry process following design rules. The 7.95 mm long modulator has a half-wave voltage of 3.2 V and an extinction ratio of 15.4 dB. We also show that modulators, with the same design but fabricated in different wafers, present very similar performances, corroborating the reliability of the process design kit (PDK) component and the manufacturing process.

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2024-06_ECIO2024_TFLN_modulators_CSEM_Final.pdf

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Additional details

Funding

European Commission
SPRINTER - Low-coSt and energy-efficient hybrid Photonic integrated circuits for fibeR-optic, free-space optIcal and mmWave commuNication systems supporting Time critical networking in industrial EnviRonments 101070581
European Commission
PATTERN - Next generation ultra-high-speed microwave Photonic integrATed circuiTs using advancE hybRid iNtegration 101070506
European Commission
LOLIPOP - Lithium NiObate empowered siLIcon nitride Platform for fragmentation free OPeration in the visible and the NIR 101070441
European Commission
ELENA - European electro-optic and nonlinear PIC platform based on lithium niobate 101016138