Published March 19, 2025 | Version v1
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Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

Authors/Creators

  • 1. EDMO icon Ecole Polytechnique Fédérale de Lausanne

Description

This folder contains all the raw and processed data used for the manuscript titled: 

Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

Files

Data_set_Gate_Tunable_Hole_Transport.zip

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md5:525e641edef8257e483dbea055a0bb6e
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Additional details

Related works

Is published in
Publication: https://doi.org/10.1002/adfm.202423734 (URL)

Funding

Swiss National Science Foundation
NCCR SPIN (phase II) 225153