Effect of Doping with Mn and Mg Metals at Structural, Electrical and Dielectric Properties of BaTiO3

BaTiO3 was doped with manganese and magnesium elements at molar ratios of [0.01, 0.02 and 0.03M] in order to study and determine the effect of doping with these metals on the electrical conductivity and dielectric constant of the ceramic compound, which has a perovskite structure type. The samples were prepared by a solid state reaction after mixing the components and carrying out the calcination process at a temperature of 850ºC. The preparation reaction was carried out at 850ºC to form a powder of the doped compound. The samples were then pressed into circular discs under 7 tonnes of pressure, each of the samples was 1.8 cm in diameter and weighed 2 grams, these procedures were carried out simultaneously for all the prepared samples. The structural properties were studied using (Xrd Siemens model D500 diffractometer) the results has shown that the lattice constants are the same for all doping ratios approximately a=b=4.01Aº, c=4.04Aº and the crystal structure is tetragonal belonging to space group P4mm. The results also showed that the Miller indices were approximately the same in all cases. The crystalline grains of the material were imaged and the morphological characteristics of the material were studied using a device (ZEISS model: Sigma VP) at the 200nm scale. It was found that the shape of the grains is almost spherical, with sizes ranging between 74 ~ 192.6nm, with some degree of porosity. Electrical conductivity and dielectric constant were measured using (GW Instek LCR-6000 Precision LCR Meter device), it was found that the electrical conductivity increased by a large percentage when the material was doped with manganese and magnesium, up to 783% when doped with 1%, and the dielectric constant decreased from 88.39 when the material was doped with 1% to 9.35 when the material was doped with 3%. The resistivity was also calculated and decreased inversely with increasing conductivity from 1.29 x 107 (Ω.m) to 4.89 x 104 (Ω.m) for the same doping level. As a result, the electrical conductivity properties improved and the dielectric properties of the doped material decreased.