TERA6G
Published January 16, 2025 | Version v1
Journal article Open

InP/Si3N4 Hybrid Integrated Lasers for RF Local Oscillator Signal Generation in Satellite Payloads

Authors/Creators

  • 1. ROR icon Universidad Carlos III de Madrid
  • 2. LioniX International BV
  • 3. ROR icon LioniX (Netherlands)
  • 4. ROR icon University College London

Contributors

  • 1. ROR icon Universidad Carlos III de Madrid

Description

This paper presents an integrated tunable hybrid multi-laser module designed to simultaneously generate multiple radiofrequency (RF) local oscillator (LO) signals through optical heterodyning. The device consists of five hybrid InP/Si3N4 integrated lasers, each incorporating an intracavity wavelength-selective optical filter formed by two micro-ring resonators. Through beating the wavelengths generated from three of these lasers, we demonstrate the simultaneous generation of two LO signals within bands crucial for satellite communications (SatCom): one in the Ka-band and the other in the V-band. The device provides an extensive wavelength tuning range across the entire C-band and exhibits exceptionally narrow optical linewidths, below 40 kHz in free-running mode. This results in ultra-wideband tunable RF signals with narrow electrical linewidths below 100 kHz. The system is compact and highly scalable, with the potential to generate up to 10 simultaneous LO signals, being a promising solution for advanced RF signal generation in high throughput satellite payloads.

Files

2025 Jessica 10.3390photonics12010077_Paper.pdf

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Additional details

Funding

European Commission
TERA6G - TERAhertz integrated systems enabling 6G Terabit-per-second ultra-massive MIMO wireless networks 101096949
European Commission
SPRINTER - Low-coSt and energy-efficient hybrid Photonic integrated circuits for fibeR-optic, free-space optIcal and mmWave commuNication systems supporting Time critical networking in industrial EnviRonments 101070581
European Commission
POLYNICES - POLYmer based electro-optic PCB motherboard integration with Si3N4 Chiplets, InP Components and Electronic ICs enabling affordable photonic modules for THz Sensing and quantum computing applications 101070549

Dates

Accepted
2025-01-30