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Published August 26, 2024 | Version v1.0
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Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer

Authors/Creators

  • 1. ROR icon Chalmers University of Technology

Description

Data used for figures in "Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under bump metallization layer"

Notes (English)

This work was supported in part by the Horizon Europe 2021-2027 framework program of the European Union under Grant Agreement No. 101080143 (SuperMeQ), the European Research Council under Grant No. 101087847 (ERC Consolidator SuperQLev), the Knut and Alice Wallenberg (KAW) Foundation through a Wallenberg Academy Fel-
lowship (WW), and the Wallenberg Center for Quantum Technology (WACQT, AP). The devices were fabricated at Chalmers Myfab Nanofabrication Laboratory and analyzed in part at Chalmers Materials Analysis Laboratory (CMAL).

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