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Modeling and Simulation Study on High-Efficiency Triple Junction Solar Cells: Optimizing Design Parameters for InGaP/GaAs/Ge

  • 1. Shri Lal Bahradur Degree College, Gonda, ,U.P., India,
  • 2. Shri Lal Bahradur Degree College, Gonda, U.P., India
  • 3. Kisan P.G. College, Bahraich U.P., India

Description

A significant advancement in photovoltaic technology, high-efficiency triple-junction solar power cells improve efficiency by utilizing three semiconductor materials to capture a broader range of sunlight. The most challenging aspect of working with these semiconductors, such   as indium   gallium   phosphide   (InGa P), gallium   arsenide (Ga As),   and germanium (Ge),    is finding the optimal balance between different design factors. This paper aims to develop  methods  to  increase  energy  conversion  efficiency  and  establish  the  foundation for improved and more durable solar energy solutions  by optimizing  the  performance of triple-junction  (3J) solar cells under  varying   temperatures.   The   results   demonstrated   that   these   variables   have   a significant impact on the performance of solar cells in terms of electrical output and overall efficiency. As the temperature increases from 300 K to 400 K,  the values  of  the  parameters vary according  to  Voc  (2.868  V), Jsc (20.45 mA/cm²), Vmax (2.801 V), Jmax (19.821 mA/cm²), Pmax (52.4567 mW/cm²), Fill Factor (89.4341%), and Efficiency (41.9653%) These   findings demonstrate a  noteworthy advancement in solar energy technologies that improve sustainability and efficiency by optimizing different parameters and investigating novel approaches. The study also contributes to the ongoing development of photovoltaic systems

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Modeling and Simulation Study on High Efficiency Triple Junction Solar Cells Optimizing Design Parameters for InGaP GaAs Ge.pdf

Additional details

Identifiers

ISSN
2394-0344

Dates

Submitted
2024-07-12
Accepted
2024-07-22

References

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