Metrology in manufacturing compound semiconductors for power electronics (PowerElec)
Published July 15, 2024 | Version v1
Dataset Open

Optical Constants of a single AlN layer on Si

Authors/Creators

  • 1. Bundesanstalt für Materialforschung und -prüfung
  • 2. ROR icon Federal Institute For Materials Research and Testing

Contributors

Data collector:

  • 1. ROR icon Aixtron (Germany)

Description

Spectroscopic ellipsometry was used to determine the thickness and dielectric function of a Aluminium Nitride (AlN) layer on a Si wafer. The layer was determined to be 170 nm thick. The layer was provided by AIXTRON and manufactured by means of MOVPE.

The data was created using a M2000DI spectroscopic ellipsometer from Woollam Co. Inc. Analysis was done using the CompleteEASE software. The model used is a multi-peak oscillator model for the AlN layer.

The data resembles common database values for the material AlN.

Files

AlN-nk.txt

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Additional details

Dates

Submitted
2024-07-15
Submitted to Zenodo
Created
2023-06-06
End of measurement campaign