Published April 23, 2024
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Conference paper
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Molybdenum as an Alternative Metal: Thin Film Properties
Description
The structural and electrical properties of Mo thin films have been studied to assess the potential of Mo as an alternative to Cu or W metallization. The adhesion energy with dense low-κ dielectrics was above 5 J/m2, suggesting that Mo can be integrated without the need for an adhesion liner. The Mo esistivity was lower than W in the entire thickness range between 3 and 50 nm and lower than Cu sandwiched between 1.5 nm TaN barriers for total a stack thickness below 8 nm. Mo thus
appears promising as an interconnect metal, especially a potential replacement for W.
Poster presented at the 2019 IEEE International Interconnect Technology Conference
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IITC_2019_Mo_TF.pdf
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Additional details
Dates
- Accepted
-
2019-02