Intelligent Power Modules with Integrated Sensors and OTP/OCP Circuits

The report focuses on "Intelligent Power Modules with Integrated Sensors and OTP/OCP Circuits." It highlights the design of the power modules, integrated sensors, and fault tolerance algorithms. The document discusses the selection process for suitable SiC and GaN devices for the converter. The report details the chosen GaN and SiC semiconductors for low and high-power converters, providing their characteristics. Various GaN devices were tested to determine the most appropriate ones. Additionally, it discusses the functionalities that the gate-driver circuit must possess to protect the converter. Many of these functionalities can be included in commercially available drivers, so the selection process considers the included features. The chosen drivers for both low and high-power converters are specified. Furthermore, the report outlines the sensors required for implementing the desired functionalities. It presents a study on potential faults that may occur in semiconductors, including their causes and effects. To detect any faults regardless of their origin, a fault detection algorithm based on the aforementioned sensors is developed. The proposed algorithm can identify various semiconductor faults and will serve as a basis for future work on fault localization during WP4. Overall, the deliverable provides an overview of the design process for power modules, integrated sensors, and fault tolerance algorithms within the RHODaS project. It encompasses the selection of suitable devices, the functionality requirements for drivers, the choice of sensors, and the analysis of potential faults in the system.