EFFECT OF HIGH PRESSURE ON STRUCTURAL AND THERMO ELASTIC PROPERTIES OF SEMICONDUCTORS

In this paper, we have theoretically predicted the structural and thermoelastic properties of certain semiconductors using equations of state. The calculations have been performed on semiconductors (ZnS, ZnSe, ZnTe) with a cubic zinc-blende (ZB) structure. Various properties such as lattice constant, bulk modulus, first derivative of bulk modulus, volume compression ratio (V/V0), relative isothermal expansion coefficient (α), and Gruneisen Parameter have been determined using different equations of states (EOSs). We observed that, with increasing pressure, the volume decreases, bulk modulus increases, the first pressure derivative of bulk modulus decreases, Gruneisen parameter decreases, lattice parameter decreases, and the relative isothermal expansion coefficient (α) decreases for ZnS, ZnSe, and ZnTe semiconductors.