11.97% (12.12%)-Limiting Highest Efficiencies Obtained Respectively in 𝐧𝐧+(𝐩𝐩+)−𝐩𝐩(𝐧𝐧) Crystalline GaSb Junction Solar Cells at T=300K, Due to the Effects of Impurity Size, Temperature, Heavy Doping, and Photovoltaic Conversion

In the n+(p+)−p(n) crystalline GaSb-junction solar cells at 300K, due to the effects of impurity size, temperature, heavy doping, and photovoltaic conversion, we show that, with an increasing donor (acceptor)-radius rd(a), both the relative dielectric constant and photovoltaic conversion factor decrease, and the intrinsic band gap increases, according to the increase in photovoltaic efficiency, as observed in Tables 1, 2 and 3, being in good accordance with an important result obtained by Shockley and Queisser (1961), with the use of the second law of thermodynamics, stating that for an increasing intrinsic band gap the photovoltaic efficiency increases. Further, for highest values of rd(a), the limiting highest efficiencies are found to be given in Tables 2 and 3, as: 11.97 % (12.12 %), obtained in such n+(p+)−p(n) crystalline GaSb-junction solar cells at 300 K, respectively.