Published January 1, 2013
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Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation
Description
We have studied the properties of thick InxGa1-xN films, with indium content ranging from
x = 0.22 to 0.67, grown by metal-modulated epitaxy. While the low indium-content films exhibit
high density of stacking faults and dislocations, a significant improvement in the crystalline quality
and optical properties has been observed starting at x = 0.6. Surprisingly, the InxGa1-xN film with
x = 0.67 exhibits high luminescence intensity, low defect density, and uniform full latticemismatch
strain relaxation. The efficient strain relaxation is shown to be due to a critical thickness
close to the monolayer range. These films were grown at low temperatures ( ~ 400 oC) to facilitate
indium incorporation and with precursor modulation to enhance surface morphology and metal
adlayer diffusion. These findings should contribute to the development of growth techniques for
nitride semiconductors under high lattice misfit conditions.
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