Multiple columns for high-throughput complementary e-beam lithography (CEBL)

Developers of e-beam lithography systems are pursuing diverse strategies to bolster throughput. To achieve parallelism, some e-beam efforts focus on building multiple-columns, and others focus on developing columns with multiple beamlets. In this paper, we discuss the benefits and throughput of a multiple column approach for a particular application: Complementary E-Beam Lithography (CEBL). CEBL is a novel approach where the e-beam lithography system is used only to pattern the smallest features. Everything else is patterned with existing optical lithography equipment. By working hand-in-hand with optical lithography, CEBL provides an urgently needed solution to create next-generation microchips. Moreover, CEBL is extendable for multiple technology generations. We show how a multiple column approach is the best way to meet the requirements for CEBL, including high throughput, high resolution and overlay accuracy, without excess complexity or cost