Published October 9, 2023
| Version v1
Dataset
Open
Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices - Dataset
Authors/Creators
- 1. Politecnico di Torino
- 2. Istituto Nazionale di Ricerca Metrologica (INRiM)
- 3. Forschungszentrum Jülich
Description
This is the dataset of "Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices"
Notes
Part of this work was supported by the European project MEMQuD, code 20FUN06, funder ID: 10.13039/100014132. This project (EMPIR 20FUN06 MEMQuD) has received funding from the EMPIR programme co-financed by the Participating States and from the European Union's Horizon 2020 research and innovation programme.
Files
Figure1b_IV_pristine_state_Au_NbOx60nm_Nb.txt
Files
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Additional details
Related works
- Is cited by
- Journal article: 10.1038/s41598-023-44110-w (DOI)