Published August 18, 2023 | Version v1

Raw data for publication titled " GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface"

Authors/Creators

  • 1. Chen

Description

Raw data (Time-resolved photoluminescence and Secondary Ion Mass Spectrometry) used for the publication: https://doi.org/10.1063/5.0040326

Layer sequence of each sample could be found in the excel sheet named SampleLibrary

 

Files

BufferTemperaturePaper_TRPL.zip

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Is published in
Journal article: 10.1063/5.0040326 (DOI)