Published January 23, 2023 | Version v1

Cryogenic InGaAs HEMT-Based Switches For Quantum Signal Routing

Description

We demonstrate cryogenic switching devices based on HEMT technology for scalable quantum computer (QC) control and readout signal routing. The switches are implemented in a quantum well network design without metal contacts between gates, and exhibit extremely steep cryogenic subthreshold swing of ∼5mV/decade, fast switching, along with on/off ratio of 107 and isolation leakage of 10 pA/μm. The use of a Pt gate metal layer that diffuses into the gate barrier is shown to significantly enhance subthreshold properties. The results indicate that HEMT-based switching circuits could offer advantages over Si CMOS at cryogenic temperatures for future high-density ultra-low power QC signal routing.

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Ferrarris_IEDM 2022 (IBM).pdf

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