Journal article Open Access
Frida Strömbeck; Yu Yan; Herbert Zirath
A D-band (110-170 GHz) ultra high data rate link is presented and characterized. The circuits are realized in a commercial 130 nm silicon germanium (SiGe) BiCMOS process. The 3-dB bandwidth for both transmitter (Tx) and receiver (Rx) is between 125 -165 GHz, resulting in a 40 GHz bandwidth. The communication link has demonstrated transmissions up to 102 Gbps using 8-phase shift keying (PSK) modulation over a one meter long foam-cladded polymer microwave fiber (PMF) with a bit error rate (BER) of 2.1 ×10−3 . Using direct quadrature phase shift keying (QPSK), 56 Gbps was reached with a BER <10−12 . Total chip area for Tx and Rx combined, including pads, is 4.2 mm 2.
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