Published April 20, 2023
| Version v1
Dataset
Open
Resistive switching and role of interfaces in memristive devices based on amorphous NbOx grown by anodic oxidation - Dataset
Authors/Creators
- 1. Istituto Nazionale di Ricerca Metrologica (INRiM)
- 2. Politecnico di Torino
- 3. politecnico di Torino
- 4. Juelich Research Center
Description
This is the dataset of "Resistive switching and role of interfaces in memristive devices based on amorphous NbOx grown by anodic oxidation"
Notes
Part of this work was supported by the European project MEMQuD, code 20FUN06, funder ID: 10.13039/100014132. This project (EMPIR 20FUN06 MEMQuD) has received funding from the EMPIR programme co-financed by the Participating States and from the European Union's Horizon 2020 research and innovation programme.
Files
figura5a_IV_some_cycles.txt
Files
(666.7 kB)
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Additional details
Related works
- Is cited by
- Journal article: 10.1039/D3CP01160G (DOI)