H2020 Twinning: SINNCE
Published November 1, 2022 | Version v1
Dataset Open

Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions_experimental dataset

Authors/Creators

  • 1. Central European Institute of Technology, Brno University of Technology, Technická 3058/10, Brno 616 00, Czech Republic

Description

This dataset contains the raw unprocessed experimental data for Maniš et al., Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions, https://pubs.rsc.org/en/content/articlelanding/2022/NA/D2NA00175F 

Notes

We acknowledge the support by the Czech Science Foundation (grant no. 20-28573S), European Commission (H2020- Twininning project no. 810626 – SINNCE, M-ERA NET HYSUCAP/TACR-TH71020004), BUT – specic research no. FSIS- 20-6485, and Ministry of Education, Youth and Sports of the Czech Republic (CzechNanoLab Research Infrastructure – LM2018110).

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Mach2022_2DGaNonSi.zip

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