Published October 19, 2022
| Version v1
Dataset
Open
Etching of Nitrides-NbN Heterostructures
Description
Niobium Nitride (NbN) is metallic at room temperature. NbN / III-N heterostructures are of interest for
new devices applications such as the Metal Base Transistor (MBT). Niobium Nitride etching in fluorine plasma is documented by Reactive Ion Etching (RIE). In this document we present the etching of a III-Nitride NbN heterostructure with fluorine
chemistry Inductively Coupled Plasma (ICP).
Files
EPD 2767_N1.csv
Additional details
Funding
- Agence Nationale de la Recherche
- Niobium - Niobium nitride / III-N heterojunctions grown by molecular beam epitaxy: First demonstration of a metal-based transistor ANR-21-CE08-0037
References
- [Delage] S. Delage, WO2019020737 – Metal-based transistor comprising materials comprising at least one group III element and one group V element, international filing date: 26.07.2018
- [Meng] X.F. Meng,R.S. Amos, A.W. Lichtenberger, R.J. Mattauch, and M.J. Feldnian ; NbN Edge Junction Fabrication : Edge Profile Control by Reactive Ion Etching ; IEEE Transactions on Magnetics, Vol. 25 n°2, pp. 1239-1242, March 1989 ;
- [Guo] S. Guo, Q. Chen, D. Pan, Y. Wu, X. Tu, G. He, H. Han, F. Li, X. Jia, Q. Zhao, H. Zhang, X. Bei, J. Xie, L. Zhang, J. Chen, L. Kang, P. Wu ; Fabrication of superconducting niobium nitride nanowire with high aspect ratio for X-ray photon detection ; Nature (2020) 10:9057 | https://doi.org/10.1038/s41598- 020-65901-5
- [Sreennidhi] T. Sreenidhi, K. Baskar, A. DasGupta, N. DasGupta ; Reactive ion etching of GaN in SF6 + Ar and SF6 + N2 plasma ; Semicond. Sci. Technol. 23 (2008) 125019 (7pp) ; doi:10.1088/0268- 1242/23/12/125019
- [EMPy] https://wiki.nanotech.ucsb.edu/wiki/Laser_Etch_Monitor_Simulation_in_Python
- [Du] X.K. Du, T.M. Wang, C. Wang, B.L. Chen, L. Zhou ; Microstructure and Optical Characterization of Magnetron Sputtered NbN Thin Films ; Chinese Journal of Aeronautics 20(2007) 140-144 ; https://doi.org/10.1016/S1000-9361(07)60021-1