Further considerations on RF CMOS compact modeling

Abstract: Compact modeling of CMOS devices has advanced day by day in the last few decades, keeping abreast with the technological development of manufacturing processes with ever smaller minimum features. These advances have made it possible to design and built circuits for operation in high frequencies, reaching into the hundreds of GHz. Notwithstanding, as the frequency of operation increases, several second-order effects become apparent, and it is important to consider them at the design table in order to obtain more reliable simulations. Some of these have to do with parasitic effects of the interconnect lines; effects associated with inductors; connectors; and the like. Furthermore, higher operating frequencies make it possible to include antennas on-chip for a host of applications, but compact models for these have not been satisfactorily developed. This talk aims at presenting some of these considerations, raising awareness of their importance in the modeling of RF CMOS circuits.