Published August 26, 2022
| Version v2
Dataset
Open
Acceleration Research on Novel Photovoltaic Materials
Description
Data and Simulation definiton file for SCAPS1D simulation that are the basis for figures 3-5 of publication DOI:10.1039/d2fd00085g, published in Faraday Discussions (2022)
Device structure for the drift-diffusion simulation is:
metal back-contact/p-type absorber(1 micron)/n-type buffer layer (30nm)/i-ZnO(80nm)/n-type ZnO(100nm)
No interface recombination and no back contact recombination is assumed.
Files
Fig1.csv
Files
(28.3 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:b58703e3658df19ec57ab06feb25bf41
|
1.9 kB | Preview Download |
|
md5:5a7cd9554a7adaff46dba2658a914941
|
1.1 kB | Preview Download |
|
md5:139e6a30260920d9c25783e003ca4df9
|
110 Bytes | Preview Download |
|
md5:1287b1b07e136056304cf31cecb60efd
|
1.8 kB | Preview Download |
|
md5:13cbbe4aeb75b1e98d6dc3f0f2bee021
|
2.0 kB | Preview Download |
|
md5:e56c529c15086084628cd7c5c4b0d63d
|
497 Bytes | Preview Download |
|
md5:d67b57eb77d815a448fa5a1e86eb2516
|
527 Bytes | Preview Download |
|
md5:5703c4cd4b19488aba04a554a1aaa273
|
613 Bytes | Preview Download |
|
md5:a7062281d9d675ef566d56fede9d618c
|
1.4 kB | Preview Download |
|
md5:ce67928dec5a833667af8bb7863a16e8
|
18.2 kB | Download |
Additional details
Related works
- Is cited by
- Journal article: 10.1039/d2fd00085g (DOI)