Pressure Sensor with Temperature Sensor and Defense for Overload Pressure
Description
The small-sized temperature sensor chip in a form of Schottky diode with reduced consumption, increased breakdown voltage and high linear temperature coefficient was developed. The temperature sensor chip is located in the single case of pressure sensor module. The research presents development adventures over previously used analogs of temperature sensor for external circuit of pressure sensor. Additionally, the assembly for pressure sensor chip for 25, 60 and 160 kPa ranges uses stops for both sides. It helps to increase the moment of burst pressure from 3 to 5 times relativity assembly without stops.
Files
Pressure Sensor with Temperature Sensor and Defense for Overload Pressure.pdf
Additional details
References
- M. Basov, D. Prigodskiy. Investigation of High Sensitivity Piezoresistive Pressure Sensors at Ultra-Low Differential Pressures – IEEE Sens. J., vol. 20, No. 14, pp. 7646–7652, 2020, https://doi.org/10.1109/JSEN.2020.2980326
- M. Basov, High sensitive, linear and thermostable pressure sensor utilizing bipolar junction transistor for 5 kPa, Physica Scripta, 96 (2021) 065705, https://doi.org/10.1088/1402-4896/abf536
- M. Basov, "Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor", IEEE Sensors, Sydney, Australia, 2021, https://doi.org/10.1109/SENSORS47087.2021.9639504
- M. Basov, "Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging from –1 to 1 kPa", IEEE Sensors Journal, vol. 21, No. 4, pp. 4357–4364, 2021, https://doi.org/10.1109/JSEN.2020.3033813
- M. Basov, D. Prigodskiy. Development of high-sensitivity piezoresistivepressure sensors for –0.5...+0.5 kPa – J. Micromech. Microeng., 30, 105006, 2020, https://doi.org/10.1088/1361-6439/ab82f1
- M. Basov, Schottky diode temperature sensor for pressure sensor, Sens. Actuators A Phys., 331, 112930, 2021, https://doi.org/10.1016/j.sna.2021.112930