Published January 11, 2016
| Version v1
Journal article
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Evidence for Germanene growth on epitaxial hexagonal (h)-AlN on Ag(111)
Authors/Creators
- 1. CNR-IOM-OGG, France
- 2. National Centre of Scientific Research Demokritos: Athens, GR
- 3. Department of Physics, National Technical University of Athens, Greece
Description
In this work, a structural analysis of Ge layers deposited by molecular beam epitaxy (MBE)
on Ag(1 1 1) surfaces with and without an AlN buffer layer have been investigated by x-ray
Absorption Spectroscopy (XAS) at the Ge-K edge. For the Ge layers deposited on h-AlN
buffer layer on Ag(1 1 1) an interatomic Ge–Ge distance RGe−Ge = 2.38 Å is found, typical of
2-Dimensional Ge layers and in agreement with the theoretical predictions for free standing
low-buckled Germanene presented in literature. First principles calculations, performed in the
density functional theory (DFT) framework, supported the experimental RHEED and XAS
findings, providing evidence for the epitaxial 2-D Ge layer formation on h-AlN/Ag(1 1 1)
template.
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