Published June 7, 2021 | Version v1
Conference paper Open

Directly Cooled Silicon Carbide Power Modules: Thermal Model and Experimental Characterization

Authors/Creators

  • 1. STMicroelectronics, Italy, University of Catania, Italy
  • 2. STMicroelectronics, Italy
  • 3. STMicroelectronics, Italy, IMM, CNR, Catania, Italy
  • 4. Dept. MIFT, University of Messina, Italy

Description

The Silicon Carbide (SiC) semiconductor material is playing a fundamental role in the development of
new power modules. Due to its excellent physical properties, the power devices based on this novel
compound improve the traction inverter performance in electric vehicles. This work presents a 3D Finite
Element Model (FEM) and fluid dynamics simulation to investigate the behavior of a directly cooled SiC
module structure. Furthermore, a two-step experimental procedure to thermally characterize the module
is also reported. It comprises a calibration and, subsequently, the thermal impedance computation. The
proposed FEM model is compared with experimental test results in order to demonstrate its
effectiveness

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DirectlyCooledSiliconCarbidePowerModulesThermalModelandExperimentalCharacterization.pdf

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Additional details

Related works

Is cited by
Conference paper: 2191-3358 (ISSN)
Conference paper: 978-3-8007-5515-8 (ISBN)