Published December 24, 2021 | Version v1

High-definition electron diffraction patterns and their indexation results of a single crystal Si wafer

Authors/Creators

  • 1. Shanghai Jiao Tong University

Description

This dataset of 1200 high-resolution (1140×1600) electron diffraction patterns are acquired from an unstrained single crystal Si wafer of (100) surface. The nominal sample tilt angle is 70°, and the step size 50µm. The indexation results, in format 'mat' of Matlab, by IDIC-EBSD with uniform and non-uniform energy levels are also provided. For each diffraction pattern, 6 parameters are stocked, i.e. the Euler angle triplet (expressed in radians and with reference to the EBSD detector) and the coordinates of the projection center.

This dataset was discussed in a published paper (https://doi.org/10.1016/j.matchar.2022.111909).

Files

Si.zip

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