Published March 20, 2021
| Version v1
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Heating of a trapped ion induced by dielectric materials
Authors/Creators
- 1. Institut für Experimentalphysik, Universität Innsbruck, Technikerstraße 25/4, 6020 Innsbruck, Austria
- 2. Institut für Experimentalphysik, Universität Innsbruck, Technikerstraße 25/4, 6020 Innsbruck, Austria, Alpine Quantum Technologies GmbH, Technikerstrasse 17/1, 6020 Innsbruck, Austria
- 3. Institut für Experimentalphysik, Universität Innsbruck, Technikerstraße 25/4, 6020 Innsbruck, Austria, Institut für Quantenoptik und Quanteninformation, Österreichische Akademie der Wissenschaften, Technikerstrasse 21 A, 6020 Innsbruck, Austria
- 4. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA,Massachusetts Institute of Technology, Cambridge, MA, USA
- 5. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA, Massachusetts Institute of Technology, Cambridge, MA, USA
Description
Electric-field noise due to surfaces disturbs the motion of nearby trapped ions, compromising the fidelity of gate operations that are the basis for quantum computing algorithms. We present a method that predicts the effect of dielectric materials on the ion's motion. Such dielectrics are integral components of ion traps. We find quantitative agreement between a model with no free parameters and measurements of a trapped ion in proximity to dielectric mirrors. We expect that this approach can be used to optimize the design of ion-trap-based quantum computers and network nodes.