Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation

The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer‐scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single‐walled carbon nanotube (SWCNT) optoelectronic properties through localized two‐photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning.