Examples of ALD saturation profiles in rectangular channel LHAR structures simulated with a diffusion-reaction model

Examples of atomic layer deposition ALD saturation profiles in rectangular channel LHAR structures simulated with a diffusion-reaction model by Ylilammi et al. (Journal of Applied Physics 123, 205301 (2018); https://doi.org/10.1063/1.5028178) as function of (a) Reactant A pulse time t, (b) Reactant A partial pressure p, and (c) sticking coefficient c. Parameters used in the simulation, if not otherwise stated: channel height H 500 nm, temperature 250°C, 250 cycles, inert carrier gas partial pressure 500 Pa, Reactant A molar mass 100 g/mol, inert carrier gas molar mass 28 g/mol, Reactant A diameter 0.600 nm, inert gas diameter 0.374 nm, adsorption capacity 4 metal atoms per nm², density of the material grown 3.5 g/cm³, pulse time 0.1 s, Reactant A partial pressure 100 Pa, sticking coefficient 0.01. 

Abbreviations: ALD = atomic layer deposition, LHAR = lateral high aspect ratio