Published October 29, 2018
| Version v1
Conference paper
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Investigating the potential of SiGe Diode in BiCMOS 55nm for power detection and datacom applications at 300 GHz
Creators
- 1. STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France
- 2. IEMN, UMR CNRS 8520, Avenue Poincaré – CS 60069, 59652 Villeneuve-d'Ascq, France
Description
This paper presents investigating the potential of SiGe Diode in BiCMOS 55nm for power detection and datacom applications at 300 GHz. This work was already published in 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) with DOI : 10.1109/IRMMW-THz.2018.8510217
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IRMMW-Japan.pdf
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