Published November 22, 2018
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On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization
Authors/Creators
- 1. STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France
- 2. IEMN, UMR CNRS 8520, Avenue Poincaré – CS 60069, 59652 Villeneuve-d'Ascq, France
Description
This paper presents on Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization. This work was already published in 2018 48th European Microwave Conference (EuMC) with DOI: 10.23919/EuMC.2018.8541387
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