Published September 15, 2019
| Version v1
Poster
Open
Changes of Graphene Transistors Electronic Properties by Organic Deposition
Authors/Creators
- 1. National Research University of Electronic Technology
- 2. BioSense Institute, University of Novi Sad
- 3. National Research University of Electronic Technology and BioSense Institute, University of Novi Sad
Description
CVD grown graphene was transferred on silicon substrate and transistor structured was formed with Cr/Au contacts. In this work, we used polzaniline (PANI), quatrothiophene (HEX) and perylene dicarboximide (PDI). Ink with these dyes consisted n-methylpyrrolidone (NMP), toluene, chlorobenzene as solvents and isopropanol as thickener. Prepared inks were printed with ink-jet printer Dimatix 3000.
Files
Book_of_Abstracts_IFSOE-2019_Nekrasov.pdf
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