Published August 18, 2020
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Low temperature selective growth of GaN single crystals on pre-patterned Si substrates_experimental dataset
Creators
- 1. Central European Institute of Technology, Brno University of Technology, Purkyňova 123, 616 00 Brno, Czech Republic
Description
This file contains the raw unprocessed experimental data for the results published in Jindřich Mach et al., Low temperature selective growth of GaN single crystals on pre-patterned Si substrates, Applied Surface Science, Volume 497, 16 August 2019, 143705.
Notes
This work was supported by the Technology Agency of the Czech Republic (Grant No. TE01020233), H2020 Twinning programme (project SINNCE, 810626), Grant Agency of the Czech Republic (grant 17-33767L), and MEYS CR (grant No. LQ1601 – CEITEC 2020). We also acknowledge the support by the Grant Agency of the Czech Republic (grant No. 17-21413S).
Files
Selektivni rust.zip
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(213.5 MB)
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