ON OPTIMIZATION OF MANUFACTURING OF ELEMENTS OF AN BINARY-ROM CIRCUIT TO INCREASE THEIR INTEGRATION RATE

In this paper we introduce an approach to increase integration rate of elements of an binary-ROM circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.