Published August 30, 1996 | Version v1

Nb2O5-doped BaTiO3 semiconductor

  • 1. V. I. Vernadsky Institute of General and Inorganic Chemistry

Description

Semiconducting Nb2O5-doped BaTiO3 was prepared and characterized by X-ray diffraction, electron microscopy, thermogravimetry, and electrical measurements. The addition of the Nb2O5 donor dopant does not affect the sequence of chemical reactions during the synthesis of the ceramic material. The effect of microstructure on the semiconducting properties of barium titanate was studied. Electrically stable (Ba1-yCay)(Ti1-xNbx)O3 ceramics were prepared.

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1996-Belous-Nb2O5-doped BaTiO3 semiconductor.pdf

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