Published September 20, 2019 | Version POSPRINT OF THE PROCEEDINGS
Conference paper Open

Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Authors/Creators

  • 1. Instituto de Energía Solar, Universidad Politécnica de Madrid
  • 2. National Renewable Energy Laboratory (NRELThe three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high
  • 3. National Renewable Energy Laboratory (NREL
  • 4. National Renewable Energy Laboratory (NREL)

Description

The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction’s bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce  high-efficiency independently connected double-junction solar cells.

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