Published October 1, 2018
| Version 1.0.0
Dataset
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6T and 8T FinFET SRAM Power Gating Data
Authors/Creators
- 1. Computer Engineering Program, California State University, Fullerton
Description
Graphs and underlying data for 6T and 8T FinFET SRAM schemes using power gating. These data and graphs accompany "Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells with Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating" submitted to IEEE Transactions on Circuits and Systems II: Express Briefs on October 1, 2018.
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