Published June 13, 2024 | Version v1

Data set of "Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory"

  • 1. Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain
  • 2. Leibniz-Institute for Solid State and Materials Research Dresden, 01069 Dresden, Germany
  • 3. Instituto de Tecnología Química (Universitat Politècnica de València- Agencia Estatal Consejo Superior de Investigaciones Científicas), 46022 València, Spain

Description

The dataset of all data presented in the article published in the virtual special issue of the Journal of Physical Chemistry Letters:

"Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory"

DOI: https://doi.org/10.1021/acs.jpclett.4c00945

 

The dataset contains the following raw data:

## FILE DESCRIPTION
--------------
### Figure 2
- Fig2a.txt : Representative characteristic _I-V_ response of memristor (5 cycles)
- Fig2b.txt : Upper vertex-dependent multilevel/multistate analog resistive switching
- Fig2c.txt : Characteristic _I-V_ response of 20 distinct devices
- Fig2d.txt : Endurance measurements for 1000 cycles of the LRS (ON state) and HRS (OFF state)

### Figure 3
- Fig3a.txt : Characteristic _I-V_ response with an upper vertex of 0.25 V
- Fig3b.txt : Characteristic _I-V_ response with an upper vertex of 0.75 V
- Fig3c.txt : Characteristic _I-V_ response with an upper vertex of 1.25 V

### Figure 4
- Fig4a.txt : IS spectrum under dark conditions at 0 V
- Fig4b.txt : IS spectrum under dark conditions at 0.2 V
- Fig4c.txt : IS spectrum under dark conditions at 0.3 V
- Fig4d.txt : IS spectrum under dark conditions at 0.4 V
- Fig4e.txt : IS spectrum under dark conditions at 0.6 V
- Fig4f.txt : IS spectrum under dark conditions at 1.0 V

### Figure 5
- Fig5a.txt : Voltage-dependent transient current response of the perovskite memristor
- Fig5b.txt : Magnified view of the transient current response of a single voltage pulse at representative applied voltages
- Fig5c.txt : Pulse width-dependent transient current response
- Fig5d.txt : Corresponding magnified view of the first and last transient responses
- Fig5e.txt : Synaptic potentiation and depression characteristic response of the memristor

### Figure 6
- Fig6a.txt : Transient current response of the volatile perovskite memristor with a single long pulse vs. a train of short pulses at 0.4 V
- Fig6b.txt : Corresponding magnified view of the transient current response of a first voltage pulse at 0.4 V
- Fig6c.txt : Transient current response of the volatile perovskite memristor with a single long pulse vs. a train of short pulses at 0.8 V
- Fig6d.txt : Corresponding magnified view of the transient current response of a first voltage pulse at 0.8 V
- Fig6e.txt : Transient current response of the volatile perovskite memristor with a single long pulse vs. a train of short pulses at 1.2 V
- Fig6f.txt : Corresponding magnified view of the transient current response of a first voltage pulse at 1.2 V

Files

Files (4.1 MB)

Name Size Download all
md5:f97cc99c8f9b5aac71cf13f9ea05be5f
4.1 MB Download

Additional details

Related works

Is supplement to
Dataset: 10.1021/acs.jpclett.4c00945 (DOI)

Funding

Ministerio de Ciencia, Innovación y Universidades
MEMORIAS TANDEM CON MATERIALES PEROVSKITA/ORGÁNICO PARA COMPUTACIÓN ANALÓGICA ROBUSTA CON MULTIPLES ESTADOS: PREPARACIÓN, CARACTERIZACIÓN ELÉCTRICA Y HERRAMIENTAS DE SIMULACIÓN PID2022-141850OB-C21