Published November 16, 2017
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Table: Critical assessment of charge mobility extraction in field-effect transistors.
Authors/Creators
- 1. Department of Physics, Rutgers University, 136 Frelinghuysen Rd., Piscataway, NJ 08854, USA
- 2. Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
- 3. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE, Minneapolis, MN 55455, USA
- 4. Cavendish Laboratory, University of Cambridge, J. J. Thomson Ave, Cambridge CB3 0HE, UK
Description
This TABLE lists the measurement reliability factor, r, the maximum power density, Pmax, dissipated in the transistor
channel, as well as the maximum current density, jSDmax, in the channel of (organic) field-effect transistors (FETs) calculated from the data shown in recent literature reports. For the exact definitions of these parameters see Nature Mater. DOI: 10.1038/nmat5035.
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- Is cited by
- 10.1038/nmat5035 (DOI)