Beta emission channeling patterns from 75Ge and 75Ga in diamond

Data from manuscript on "Structural formation yield of GeV centers from implanted Ge in diamond", published in Materials for Quantum Technologies 4 (2024) 025101

2-dimensional experimental beta emission channeling patterns from beta-decay of 75 Ge following 75Ga implanted in diamond as shown in Figures 2,3,4,8 of the mentioned manuscript

20x20 matrix of counts within position-sensitive detector, pixel size 1.3x1.3 mm2 at 60 cm distance from sample

For <211>, <100> and <111> patterns, major horizontal planes are (110), while for the <110> patterns horizontal plane is (100) and vertical (110)

Ti = implantation temperature, Ta = annealing temperature, room temperature RT=30°C 

Figure 2: 75Ge patterns from "higher fluence" sample (~2E13 cm-2 per implantation step):

(a) vat4579a.csv: Ti=RT <110>

(b) vat4577a.csv: Ti=RT <211>

(c) vat4576a.csv: Ti=RT <100>

(d) vat4578a.csv: Ti=RT <111>

Figure 3: 75Ge patterns from "higher fluence" sample (~2E13 cm-2 per implantation step):

(a) vat4600a.csv: Ti=RT Ta=900°C <110>

(b) vat4598a.csv: Ti=RT Ta=900°C <211>

(c) vat4597a.csv: Ti=RT Ta=900°C <100>

(d) vat4599a.csv: Ti=RT Ta=900°C <111>

Figure 4: 75Ge patterns from "lower fluence" sample (~2E12 cm-2 per implantation step):

(a) vat4679a.csv: Ti=900°C <110>

(b) vat4677a.csv: Ti=900°C <211>

(c) vat4676a.csv: Ti=900°C <100>

(d) vat4678a.csv: Ti=900°C <111>

Figure 8: 75Ga patterns (measured during implantation)

(a) vat4660a.csv: Ti=30°C <100> "lower fluence" sample

(b) vat4581a.csv: Ti=30°C <100> "higher fluence" sample

(c) vat4601a.csv: Ti=300°C <100> "higher fluence" sample

(d) vat4617a.csv: Ti=600°C <100> "higher fluence" sample