Published March 15, 2023 | Version v1
Journal article Open

Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices

  • 1. DTU Fotonik, Technical University of Denmark, 5205 Kgs. Lyngby, Hovedstaden, Denmark
  • 2. Centre National de la Recherche Scientifique


Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstly, we develop a wet-oxidationassisted chemical mechanical polishing (CMP) process for 4H-SiC, which can significantly decrease the surface roughness from 3.67 nm to 0.15 nm, thus mitigating the light scattering loss. Secondly, we find that the thermal annealing of the 4H-SiC devices at 1300 ◦C can help to decrease the material absorption loss. We experimentally demonstrate that the wet-oxidation-assisted CMP and the hightemperature annealing can effectively increase the intrinsic quality factor of the 4H-SiC optical microring resonators.


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SiComb – CMOS compatible and ultra broadband on-chip SiC frequency comb 899679
European Commission