Magneto-Ionics in Annealed W/CoFeB/HfO2 Thin Films
Creators
- Pachat, Rohit1
- Ourdani, Djoudi2
- Syskaki, Maria Andromachi3
- Lamperti, Alessio4
- Roy, Subhajit1
- Chen, Song5
- Di Pietro, Adriano6
- Largeau, Ludovic1
- Massouras, Maryam1
- Balan, Cristina7
- van der Jagt, Johannes Wilhelmus5
- Agnus, Guillaume1
- Roussigné, Yves2
- Gabor, Mihai8
- Chérif, Salam Mourad2
- Durin, Gianfranco9
- Ono, Shimpei10
- Langer, Jürgen3
- Querlioz, Damien1
- Ravelosona, Dafiné1
- Belmeguenai, Mohamed2
- Herrera Diez, Liza1
- 1. Centre de Nanosciences et de Nanotechnologies CNRS Université Paris-Saclay Palaiseau 91120, France
- 2. Laboratoire des Sciences des Procédés et des Matériaux CNRS-UPR 3407 Université Sorbonne Paris Nord Villetaneuse 93430, France
- 3. Singulus Technology AG Hanauer Landstrasse 103 63796, Kahl am Main, Germany
- 4. IMM-CNR Unit of Agrate Brianza Via C. Olivetti 2, Agrate Brianza 20864, Italy
- 5. Spin-Ion Technologies 10 Boulevard Thomas Gobert, Palaiseau 91120, France
- 6. Istituto Nazionale di Ricerca Metrologica Strada delle Cacce 91, Torino 10135, Italy and Politecnico di Torino Viale duca degli Abruzzi 24, Torino 10129, Italy
- 7. Univ. Grenoble Alpes, CNRS, Institut Néel Grenoble 38000, France
- 8. Center for Superconductivity Spintronics and Surface Science Physics and Chemistry Department Technical University of Cluj-Napoca Cluj-Napoca RO-400114, Romania
- 9. Istituto Nazionale di Ricerca Metrologica Strada delle Cacce 91, Torino 10135, Italy
- 10. Central Research Institute of Electric Power Industry Yokosuka, Kanagawa 240-0196, Japan
Description
The magneto-ionic modulation of the Dzyaloshinskii–Moriya interaction
(DMI) and the perpendicular magnetic anisotropy (PMA), in W/CoFeB/HfO2
stacks annealed at different temperatures and for varying annealing times,
are presented in this work. A large modulation of PMA and DMI is observed
in the systems annealed at 390 and 350 ° C, whereas no response to voltage is
observed in the as-grown samples. A strong DMI is only observed in the samples
annealed at 390 ° C for 1 h, while PMA is present for all annealing times
at temperatures of 390 and 350 ° C. Magnetic properties including domain
wall velocity improve drastically with increasing the annealing temperature
and time, while the magneto-ionic reversibility is increasingly compromised.
The changes in PMA and DMI induced by the gate voltages in the samples
annealed at 390 ° C are permanent, while partial reversibility is only observed
for the samples annealed at 350 ° C for short times. This dependence of reversibility
on post-grown annealing has been associated to the influence of crystallization
on ion mobility. These results show that a compromise between the
enhancement of the magnetic properties and the magneto-ionic performance
could be needed in systems requiring annealing to develop PMA and DMI.
Files
Pachat AMI 2022.pdf
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