FEATURES

Space-saving SC70 and SOT-23 packaging Wide bandwidth: 8 MHz @ 5 V

Low offset voltage: 1.2 mV maximum Rail-to-rail output swing

2.9 V/μs slew rate Unity gain stable

Single-supply operation: 2.7 V to 12 V

APPLICATIONS

8 MHz Rail-to-Rail Operational Amplifiers AD8519/AD8529

PIN CONFIGURATIONS


NC

1



8

NC

–IN A

2



7

V+

+IN A

3



6

OUT A

V–

4

AD8519


5

NC

01756-001

NC = NO CONNECT

Figure 1. 8-Lead SOIC (R Suffix)


AD8519

Portable communications Microphone amplifiers Portable phones

Sensor interface

OUT A 1


V– 2


+IN A 3

V+


5

01756-002

4 –IN A

Active filters PCMCIA cards ASIC input drivers

Wearable computers Battery-powered devices Voltage reference buffers Personal digital assistants

Figure 2. 5-Lead SC70 and SOT-23 (KS and RJ Suffixes)


OUT A

1


AD8529

8

V+

–IN A

2



7

OUT B

+IN A

3



6

–IN B

V–

4



5

+IN B

01756-003

Figure 3. 8-Lead SOIC and MSOP (R and RM Suffixes)



GENERAL DESCRIPTION

The AD8519 and AD8529 are rail-to-rail output bipolar amplifiers with a unity gain bandwidth of 8 MHz and a typical voltage offset of less than 1 mV. The AD8519 brings precision and bandwidth to the SC70 and SOT-23 packages. The low supply current makes the AD8519/AD8529 ideal for battery- powered applications. The rail-to-rail output swing of the AD8519/AD8529 is larger than standard video op amps, making them useful in applications that require greater dynamic range than standard video op amps. The 2.9 V/μs slew rate makes the AD8519/AD8529 a good match for driving ASIC inputs such as voice codecs.


The small SC70 package makes it possible to place the AD8519 next to sensors, reducing external noise pickup.

The AD8519/AD8529 is specified over the extended industrial (−40°C to +125°C) temperature range. The AD8519 is available in 5-lead SC70 and 5-lead SOT-23 packages, and an 8-lead SOIC surface-mount package. The AD8529 is available in 8-lead SOIC and 8-lead MSOP packages.


Rev. D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibilityis assumedby AnalogDevices foritsuse, norforanyinfringements of patents or other rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.


One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com

Fax: 781.461.3113 ©1998–2007 Analog Devices, Inc. All rights reserved.


TABLE OF CONTENTS

Features 1

Applications 1

Pin Configurations 1

General Description 1

Revision History 2

Specifications 3

Electrical Characteristics 3

Absolute Maximum Ratings 7

Thermal Resistance 7

ESD Caution. 7

Typical Performance Characteristics 8

Applications Information 12

Maximum Power Dissipation 12

Precision Full-Wave Rectifier 12

10× Microphone Preamp Meets PC99 Specifications 13

Two-Element Varying Bridge Amplifier 13

Outline Dimensions 14

Ordering Guide 15


REVISION HISTORY

5/07—Rev. C to Rev. D

Changes to Features 1

Changes to General Description 1

Changes to Two-Element Bridge Amplifier Section 13

Updated Outline Dimensions 14


2/03—Rev. B to Rev. C

Changed μSOIC to MSOP.................................................Universal

Changed SO-8 to R-8 .........................................................Universal

Changes to Precision Full-Wave Rectifier section 9

Changes to 10× Microphone Preamp Meets PC99

Specifications section 9

Updated Outline Dimensions 12


SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

VS = 5.0 V, V− = 0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.


Table 1.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS







Offset Voltage

VOS

AD8519AKS, AD8519ART


600

1100

μV



−40°C ≤ TA ≤ +125°C


800

1300

μV



AD8519AR (R-8), AD8529


600

1000

μV



−40°C ≤ TA ≤ +125°C



1100

μV

Input Bias Current

IB




300

nA



−40°C ≤ TA ≤ +125°C



400

nA

Input Offset Current

IOS




±50

nA



−40°C ≤ TA ≤ +125°C



±100

nA

Input Voltage Range

VCM


0


4

V

Common-Mode Rejection Ratio

CMRR

0 V ≤ VCM ≤ 4.0 V, −40°C ≤ TA ≤ +125°C

63

100


dB

Large Signal Voltage Gain

AVO

RL = 2 kΩ, 0.5 V < VOUT < 4.5 V


30


V/mV



RL = 10 kΩ, 0.5 V < VOUT < 4.5 V

50

100


V/mV



RL = 10 kΩ, −40°C ≤ TA ≤ +125°C

30



V/mV

Offset Voltage Drift

∆VOS/∆T



2


μV/°C

Bias Current Drift

∆IB/∆T



500


pA/°C

OUTPUT CHARACTERISTICS







Output Voltage Swing High

VOH

IL = 250 μA







−40°C ≤ TA ≤ +125°C

4.90



V



IL = 5 mA

4.80



V

Output Voltage Swing Low

VOL

IL = 250 μA







−40°C ≤ TA ≤ +125°C



80

mV



IL = 5 mA



200

mV

Short-Circuit Current

ISC

Short to ground, instantaneous


±70


mA

Maximum Output Current

IOUT



±25


mA

POWER SUPPLY

Power Supply Rejection Ratio


Supply Current/Amplifier

PSRR ISY


VS = 2.7 V to 7 V

−40°C ≤ TA ≤ +125°C VOUT = 2.5 V

−40°C ≤ TA ≤ +125°C



110

80

600


1200

1400


dB dB μA μA

DYNAMIC PERFORMANCE





Slew Rate

SR

1 V < VOUT < 4 V, RL = 10 kΩ

2.9

V/μs

Settling Time

tS

To 0.01%

1200

ns

Gain Bandwidth Product

GBP


8

MHz

Phase Margin

Φm


60

Degrees

NOISE PERFORMANCE





Voltage Noise

en p-p

0.1 Hz to 10 Hz

0.5

μV p-p

Voltage Noise Density

en

f = 1 kHz

10

nV/√Hz

Current Noise Density

in

f = 1 kHz

0.4

pA/√Hz


VS = 3.0 V, V− = 0 V, VCM = 1.5 V, TA = 25°C, unless otherwise noted.


Table 2.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS







Offset Voltage

VOS

AD8519AKS, AD8519ART


700

1200

μV



−40°C ≤ TA ≤ +125°C


900

1400

μV



AD8519AR (R-8), AD8529


700

1100

μV



−40°C ≤ TA ≤ +125°C



1200

μV

Input Bias Current

IB




300

nA

Input Offset Current

IOS




±50

nA

Input Voltage Range

VCM


0


2

V

Common-Mode Rejection Ratio

CMRR

0 V ≤ VCM ≤ 2.0 V,







−40°C ≤ TA ≤ +125°C

55

75


dB

Large Signal Voltage Gain

AVO

RL = 2 kΩ, 0.5 V < VOUT < 2.5 V


20


V/mV



RL = 10 kΩ

20

30


V/mV

OUTPUT CHARACTERISTICS

Output Voltage Swing High


Output Voltage Swing Low

VOH VOL


IL = 250 μA IL = 5 mA

IL = 250 μA

IL = 5 mA


2.90

2.80



100

200


V V

mV

mV

POWER SUPPLY







Power Supply Rejection Ratio

PSRR

VS = 2.5 V to 7 V, −40°C ≤ TA ≤ +125°C

60

80


dB

Supply Current/Amplifier

ISY

VOUT = 1.5 V


600

1100

μA



−40°C ≤ TA ≤ +125°C



1300

μA

DYNAMIC PERFORMANCE





Slew Rate

SR

RL = 10 kΩ

1.5

V/μs

Settling Time

tS

To 0.01%

2000

ns

Gain Bandwidth Product

GBP


6

MHz

Phase Margin

Φm


55

Degrees

NOISE PERFORMANCE





Voltage Noise Density

en

f = 1 kHz

10

nV/√Hz

Current Noise Density

in

f = 1 kHz

0.4

pA/√Hz


VS = 2.7 V, V− = 0 V, VCM = 1.35 V, TA = 25°C, unless otherwise noted.


Table 3.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS







Offset Voltage

VOS

AD8519AKS, AD8519ART


700

1400

μV



−40°C ≤ TA ≤ +125°C


900

1600

μV



AD8519AR (R-8), AD8529


700

1200

μV



−40°C ≤ TA ≤ +125°C



1300

μV

Input Bias Current

IB




300

nA

Input Offset Current

IOS




±50

nA

Input Voltage Range

VCM


0


2

V

Common-Mode Rejection Ratio

CMRR

0 V ≤ VCM ≤ 1.7 V, −40°C ≤ TA ≤ +125°C

55

75


dB

Large Signal Voltage Gain

AVO

RL = 2 kΩ, 0.5 V < VOUT < 2.2 V


20


V/mV



RL = 10 kΩ

20

30


V/mV

OUTPUT CHARACTERISTICS

Output Voltage Swing High


Output Voltage Swing Low

VOH VOL


IL = 250 μA IL = 5 mA

IL = 250 μA

IL = 5 mA


2.60

2.50



100

200


V V

mV

mV

POWER SUPPLY

Power Supply Rejection Ratio


Supply Current/Amplifier

PSRR ISY


VS = 2.5 V to 7 V

−40°C ≤ TA ≤ +125°C VOUT = 1.35 V

−40°C ≤ TA ≤ +125°C


60


80

600


1100

1300


dB μA μA

DYNAMIC PERFORMANCE





Slew Rate

SR

RL = 10 kΩ

1.5

V/μs

Settling Time

tS

To 0.01%

2000

ns

Gain Bandwidth Product

GBP


6

MHz

Phase Margin

Φm


55

Degrees

NOISE PERFORMANCE





Voltage Noise Density

en

f = 1 kHz

10

nV/√Hz

Current Noise Density

in

f = 1 kHz

0.4

pA/√Hz


VS = 5.0 V, V− = −5 V, VCM = 0 V, TA = 25°C, unless otherwise noted.


Table 4.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS







Offset Voltage

VOS

AD8519AKS, AD8519ART


600

1100

μV



−40°C ≤ TA ≤ +125°C


800

1300

μV



AD8519AR (R-8), AD8529


600

1000

μV



−40°C ≤ TA ≤ +125°C



1100

μV

Input Bias Current

IB

VCM = 0 V



300

nA



VCM = 0 V, −40°C ≤ TA ≤ +125°C



400

nA

Input Offset Current

IOS

VCM = 0 V



±50

nA



VCM = 0 V, −40°C ≤ TA ≤ +125°C



±100

nA

Input Voltage Range

VCM


−5


+4

V

Common-Mode Rejection Ratio

CMRR

−4.9 V ≤ VCM ≤ +4.0 V,







−40°C ≤ TA ≤ +125°C

70

100


dB

Large Signal Voltage Gain

AVO

RL = 2 kΩ


30


V/mV



RL = 10 kΩ

50

200


V/mV



−40°C ≤ TA ≤ +125°C

25



V/mV

Offset Voltage Drift

∆VOS/∆T



2


μV/°C

Bias Current Drift

∆IB/∆T



500


pA/°C

OUTPUT CHARACTERISTICS







Output Voltage Swing High

VOH

IL = 250 μA







−40°C ≤ TA ≤ +125°C

4.90



V



IL = 5 mA

4.80



V

Output Voltage Swing Low

VOL

IL = 250 μA







−40°C ≤ TA ≤ +125°C



−4.90

V



IL = 5 mA



−4.80

V

Short-Circuit Current

ISC

Short to ground, instantaneous


±70


mA

Maximum Output Current

IOUT



±25


mA

POWER SUPPLY







Power Supply Rejection Ratio

PSRR

VS = ±1.5 V to ±6 V, −40°C ≤ TA ≤ +125°C

60

100


dB

Supply Current/Amplifier

ISY

VOUT = 0 V


600

1200

μA



−40°C ≤ TA ≤ +125°C



1400

μA

DYNAMIC PERFORMANCE





Slew Rate

SR

−4 V < VOUT < +4 V, RL = 10 kΩ

2.9

V/μs

Settling Time

tS

To 0.01%

1000

ns

Gain Bandwidth Product

GBP


8

MHz

Phase Margin

Φm


60

Degrees

NOISE PERFORMANCE





Voltage Noise Density

en

f = 1 kHz

10

nV/√Hz

Current Noise Density

in

f = 1 kHz

0.4

pA/√Hz


ABSOLUTE MAXIMUM RATINGS

Table 5.

Parameter

Rating

Supply Voltage

±6 V

Input Voltage1

±6 V

Differential Input Voltage2

±0.6 V

Storage Temperature Range

−65°C to +150°C

Operating Temperature Range

−40°C to +125°C

Junction Temperature Range

−65°C to +150°C

Lead Temperature Range (Soldering, 60 sec)

300°C

1 For supply voltages less than ±6 V, the input voltage is limited to less than or equal to the supply voltage.

2 For differential input voltages greater than ±0.6 V, the input current should be limited to less than 5 mA to prevent degradation or destruction of the input devices.

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.


THERMAL RESISTANCE

Table 6.

Package Type

θ 1 JA

θJC

Unit

5-Lead SC70 (KS)

376

126

°C/W

5-Lead SOT-23 (RJ)

230

146

°C/W

8-Lead SOIC (R)

158

43

°C/W

8-Lead MSOP (RM)

210

45

°C/W

1 θJA is specified for worst-case conditions, that is, θJA is specified for device soldered in circuit board for SOT-23 and SOIC packages.


ESD CAUTION


TYPICAL PERFORMANCE CHARACTERISTICS

VS = 5V TA = 25°C

COUNT = 395 OP AMPS





























































60


QUANTITY OF AMPLIFIERS

50


40


30


20


10


40


VS = 5V TA = 25°C

0


INPUT BIAS CURRENT (nA)

–40


–80


–120


–160


–200


01756-004

0

–1.0 –0.6 –0.2 0.2 0.6 1.0

INPUT OFFSET VOLTAGE (mV)


–240


01756-007

0 1 2 3 4 5

COMMON-MODE VOLTAGE (V)

Figure 4. Input Offset Voltage Distribution Figure 7. Input Bias Current vs. Common-Mode Voltage


VS = 5V

600 120


SUPPLY CURRENT (µA)

COMMON-MODE REJECTION (dB)

100


550

80


60

500


01756-005

40



450


0 2 4 6 8 10 12

SUPPLY VOLTAGE (V)

20

01756-008

0 1 2 3 4 5

COMMON-MODE VOLTAGE (V)

Figure 5. Supply Current per Amplifier vs. Supply Voltage


800

Figure 8. Common-Mode Rejection vs. Common-Mode Voltage













VS = 5V TA = 25°C



GAIN







































PHASE
































































50



SUPPLY CURRENT (µA)

700


600

VS = 5V 40

OPEN-LOOP GAIN (dB)

PHASE SHIFT (Degrees)

30 45

20 90

500

400

VS = 10V

VS = 2.7V, 3.0V


10


0


–10


–20


135


180


225


270


01756-006

300

–50 –25 0 25 50 75 100 125 150

TEMPERATURE (°C)

Figure 6. Supply Current per Amplifier vs. Temperature


–30

01756-009

100k 1M 10M 100M FREQUENCY (Hz)

Figure 9. Open-Loop Gain, Phase vs. Frequency


60


CLOSED-LOOP GAIN (dB)

40


20


0


–20


VS = 5V RL = 830Ω TA = 25°C

CL ≤ 5pF

60

VS = 5V VCM = 2.5V

50 RL = 10kΩ

TA = 25°C VIN = ±50mV

OVERSHOOT (%)

40



–OS

30



+OS

20


10


01756-010

–40

10k 100k 1M 10M 100M FREQUENCY (Hz)

Figure 10. Closed-Loop Gain vs. Frequency

0

01756-013

10 100 1k CAPACITANCE (pF)

Figure 13. Overshoot vs. Capacitance Load


110


100


90


CMRR (dB)

80


70


60


50


40


30


VS = 5V TA = 25°C

4

VS = 5V

1%

3 TA = 25°C


0.1%

2


STEP SIZE (V)

1


0


0.1%

–1



1%

–2


01756-014

–3


01756-011

20

1k 10k 100k 1M 10M FREQUENCY (Hz)

Figure 11. CMRR vs. Frequency


–4

0 1 2

SETTLING TIME (µs)

Figure 14. Step Size vs. Settling Time


90


80


70


60

PSRR (dB)

+PSRR

50


40


30


20


10


–PSRR


VS = 5V TA = 25°C

5


MAXIMUM OUTPUT SWING (V p-p)

4

DISTORTION < 1%


3


2


1


VS = 5V AVCC = 1 RL = 10kΩ

TA = 25°C

CL = 15pF


01756-012

0

1k 10k 100k 1M 10M FREQUENCY (Hz)

Figure 12. PSRR vs. Frequency


0

01756-015

10k 100k 1M 10M FREQUENCY (Hz)

Figure 15. Output Swing vs. Frequency


300


250


VS = 5V TA = 25°C


VS = ±2.5V AV = 100kΩ

en = 0.4µV p-p


OUTPUT IMPEDANCE (Ω)

200


150


100


50


AVCC = 10


01756-019

AVCC = 1



01756-016

0

100k 1M 10M FREQUENCY (Hz)

20mV 1s

Figure 16. Output Impedance vs. Frequency Figure 19. 0.1 Hz to 10 Hz Noise


80

VS = 5V

VOLTAGE NOISE DENSITY (nV/ Hz)

70 TA = 25°C


60


50


VS = ±2.5V VIN = 6V p-p AV = 1


40


30


20


01756-017

01756-020

10


0

10 100 1k 10k FREQUENCY (Hz)

Figure 17. Voltage Noise Density


1V


Figure 20. No Phase Reversal


20µs


8

VS = 5V

CURRENT NOISE DENSITY (pA/ Hz)

7 TA = 25°C


6


5


VS = ±2.5V AVCC = 1

TA = 25°C CL = 100pF RL = 10kΩ


4


3


2


01756-018

1


0

10 100 1k 10k FREQUENCY (Hz)


20mV


01756-021

500ns

Figure 18. Current Noise Density Figure 21. Small Signal Transient Response


VS = ±2.5V AVCC = 1

TA = 25°C CL = 100pF

























































































500mV





50µs


01756-022

Figure 22. Large Signal Transient Response


APPLICATIONS INFORMATION

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8519/AD8529 is limited by the associated rise in junction temperature. The maximum safe junction temperature is 150°C for these plastic packages. If this maximum is momentarily exceeded, proper circuit operation is restored as soon as the

die temperature is reduced. Operating the product in an


VIN


R1 10kΩ


R4 10kΩ


R2 10kΩ


D1 1N914


U1


NODE A


D2 1N914


R3 4.99kΩ


R5 10kΩ


U2

AD8519


VOUT

overheated condition for an extended period can result in permanent damage to the device.

PRECISION FULL-WAVE RECTIFIER


R6

5kΩ

AD8519


VIRTUAL GROUND =


VCC 2


01756-023

R7 3.32kΩ

Slew rate is probably the most underestimated parameter when

designing a precision rectifier. Yet without a good slew rate, large glitches are generated during the period when both diodes are off.

The operation of the basic circuit (shown in Figure 23) should be examined before considering the slew rate further. U1 is set up to have two states of operation. D1 and D2 diodes switch the output between the two states. State one is an inverter with a gain of +1, and state two is a simple unity gain buffer where the output is equal to the value of the virtual ground. The virtual ground is the potential present at the noninverting node of the U1. State one is active when VIN is larger than the virtual ground. D2 is on in this condition. If VIN drops below virtual ground, D2 turns off and D1 turns on. This causes the output of U1 to simply buffer the virtual ground and this configuration is state two. Therefore, the function of U1, which results from these two states of operation, is a half-wave inverter. The U2 function takes the inverted half wave at a gain of two and sums it into the original VIN wave, which outputs a rectified full wave.

Figure 23. Precision Full-Wave Rectifier


Switching glitches are caused when D1 and D2 are both momentarily off. This condition occurs every time the input signal is equal to the virtual ground potential. When this condition occurs, the U1 stage is taken out of the VOUT equation and VOUT is equal to VIN × R5 × (R4 || R1 + R2 + R3). Note that Node A should be VIN inverted or virtual ground, but in this condition, Node A is simply tracking VIN. Given a sine wave input centered around virtual ground, glitches are generated

at the sharp negative peaks of the rectified sine wave. If the glitches are hard to notice on an oscilloscope, raise the fre- quency of the sine wave until they become apparent. The size of the glitches is proportional to the input frequency, the diode

turn-on potential (0.2 V or 0.65 V), and the slew rate of the op amp.

R6 and R7 are both necessary to limit the amount of bias current related voltage offset. Unfortunately, there is no perfect value for R6 because the impedance at the inverting node is altered as D1 and D2 switch. Therefore, there is also some

VOUT

VIN

optimized offset is still intolerable.

The AD8519 offers a unique combination of speed vs. power ratio at 2.7 V single supply, small size (SC70 and SOT-23), and low noise that makes it an ideal choice for most high volume and high precision rectifier circuits.


10× MICROPHONE PREAMP MEETS PC99 SPECIFICATIONS

This circuit, while lacking a unique topology, is anything but featureless when an AD8519 is used as the op amp. This preamp gives 20 dB gain over a frequency range of 20 Hz to 20 kHz and is fully PC99 compliant in all parameters including THD + N, dynamic range, frequency range, amplitude range, and crosstalk. Not only does this preamp comply with the PC99 specifications, it far surpasses them. In fact, when the input noise is 120 dB, this preamp has a VOUT noise of around 100 dB, which is suit- able for most professional 20-bit audio systems. At 120 dB THD

+ N in unity gain, the AD8519 is suitable for 24-bit professional audio systems. In other words, the AD8519 will not be the limiting performance factor in audio systems despite its small size and low cost.

Slew rate related distortion is not present at the lower voltages because the AD8519 is so fast at 2.1 V/μs. A general rule of thumb for determining the necessary slew rate for an audio system is to take the maximum output voltage range of the device, given the design’s power rails, and divide by two. In Figure 24, the power rails are 2.7 V and the output is rail-to-rail. Enter these numbers into the equation: 2.7/2 = 1.35 V, and the minimum ideal slew rate is 1.35 V/μs.

While this data sheet gives only one audio example, many audio circuits are enhanced with the use of the AD8519. Examples include: active audio filters such as bass, treble, and equalizers; PWM filters at the output of audio DACs; buffers and summers for mixing stations; and gain stages for volume control.

240pF


2.7V

30.9kΩ

TWO-ELEMENT VARYING BRIDGE AMPLIFIER

There are a host of bridge configurations available to designers. For a complete analysis, look at the ubiquitous bridge and its different forms. Refer to the 1992 Amplifier Applications Guide1.

Figure 25 is a schematic of a two-element varying bridge. This configuration is commonly found in pressure and flow transduc- ers. With a two-element varying bridge, the signal is 2× as compared to a single-element varying bridge. The advantages of this type of bridge are gain setting range and single-supply application. Negative characteristics are nonlinear operation and required R matching. Given these sets of conditions, requirements, and characteristics, the AD8519 can be successfully used in this configuration because of its rail-to-rail output and low offset. Perhaps the greatest benefits of the AD8519, when used in the bridge configuration, are the advantages it can bring when placed in a remote bridge sensor. For example, the tiny SC70 and SOT-23 packages reduce the overall sensor size; low power allows for remote powering via batteries or solar cells, high output current drive to drive a long cable; and 2.7 V operation for two-cell operation.

2.7V

RF


R

R


R

AD8519

R

01756-025

RF


Figure 25. Two-Element Varying Bridge Amplifier


1 Adolfo Garcia and James Wong, Chapter 2, 1992, Amplifier Applications Guide.


MIC IN


1kΩ


1nF NPO


C1

1µF


3.09kΩ


2.7V


AD8519


CODEC LINE IN OR MIC IN


48kΩ


46.4kΩ 93.1kΩ


2.7V

01756-024

10µF ELECT


Figure 24. 10× Microphone Preamplifier


OUTLINE DIMENSIONS

5.00 (0.1968)

4.80 (0.1890)


3.20

3.00

2.80



4.00 (0.1574)

3.80 (0.1497)

8

5

6.20 (0.2441)

4

1

5.80 (0.2284)


1.27 (0.0500) 0.50 (0.0196)


45°


8

3.20

3.00

2.80 1


5 5.15

4.90

4.65

4


0.25 (0.0098)

BSC

1.75 (0.0688)

1.35 (0.0532)

0.25 (0.0099)

PIN 1

0.65 BSC

0.10 (0.0040)

0.95

COPLANARITY

0.51 (0.0201)

1.27 (0.0500)

0.85

1.10 MAX

0.10

SEATING PLANE

0.31 (0.0122)

0.25 (0.0098)

0.17 (0.0067)

0.40 (0.0157)

0.75


0.80

0.15

0.38

0.23

8° 0.60

012407-A

COMPLIANT TO JEDEC STANDARDS MS-012-A A

0.00

0.22

0.08

0.40

CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.

COPLANARITY 0.10

SEATING PLANE


Figure 26. 8-Lead Standard Small Outline Package [SOIC_N]

Narrow Body (R-8)

Dimensions shown in millimeters and (inches)

COMPLIANT TO JEDEC STANDARDS MO-187-AA

Figure 27. 8-Lead Mini Small Outline Package [MSOP] (RM-8)

Dimensions shown in millimeters


1.35

1.25

1.15


2.20

2.00

1.80


5 4


1 2 3


2.40

2.10

1.80


2.90 BSC


5 4


1.60 BSC 2.80 BSC

1 2 3


PIN 1

0.65 BSC


PIN 1

1.00

0.90


1.10

0.80

0.40

0.10


1.30


1.90

0.95 BSC

0.70


0.46

1.15

0.90

BSC

0.10 MAX

0.30 0.15


SEATING PLANE

0.22

0.08

0.36

0.26


1.45 MAX


0.22 0.08

0.10 COPLANARITY 10°


COMPLIANT TO JEDEC STANDARDS MO-203-AA

0.15 MAX

0.50

0.30

SEATING PLANE

0.60

0.45

0.30


Figure 28. 5-Lead Thin Shrink Small Outline Transistor Package [SC70] (KS-5)

Dimensions shown in millimeters

COMPLIANT TO JEDEC STANDARDS MO-178-A A

Figure 29. 5-Lead Small Outline Transistor Package [SOT-23] (RJ-5)

Dimensions shown in millimeters


ORDERING GUIDE


Model

Temperature Range


Package Description


Package Option


Branding Information

AD8519AKS-REEL7

−40°C to +125°C

5-Lead SC70

KS-5

A3B

AD8519AKSZ-REEL71

−40°C to +125°C

5-Lead SC70

KS-5

A11

AD8519ART-REEL

−40°C to +125°C

5-Lead SOT-23

RJ-5

A3A

AD8519ART-REEL7

−40°C to +125°C

5-Lead SOT-23

RJ-5

A3A

AD8519ARTZ-REEL1

−40°C to +125°C

5-Lead SOT-23

RJ-5

A3A#

AD8519ARTZ-REEL71

−40°C to +125°C

5-Lead SOT-23

RJ-5

A3A#

AD8519AR

−40°C to +125°C

8-Lead SOIC_N

R-8


AD8519AR-REEL

−40°C to +125°C

8-Lead SOIC_N

R-8


AD8519AR-REEL7

−40°C to +125°C

8-Lead SOIC_N

R-8


AD8519ARZ1

−40°C to +125°C

8-Lead SOIC_N

R-8


AD8519ARZ-REEL

−40°C to +125°C

8-Lead SOIC_N

R-8


AD8519ARZ-REEL71

−40°C to +125°C

8-Lead SOIC_N

R-8


AD8529AR

−40°C to +125°C

8-Lead SOIC_N

R-8


AD8529AR-REEL

−40°C to +125°C

8-Lead SOIC_N

R-8


AD8529ARZ1

−40°C to +125°C

8-Lead SOIC_N

R-8


AD8529ARZ-REEL1

−40°C to +125°C

8-Lead SOIC_N

R-8


AD8529ARM-REEL

−40°C to +125°C

8-Lead MSOP

RM-8

A5A

AD8529ARMZ-REEL1

−40°C to +125°C

8-Lead MSOP

RM-8

A5A#

1 Z = RoHS compliant part, # denotes RoHS compliant part may be top or bottom marked.


NOTES


©1998–2007 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.

C01756–0–5/07(D)

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AD8519AKSZ-REEL7 AD8519ARTZ-REEL7 AD8529ARZ AD8519ARTZ-REEL AD8529ARMZ-REEL AD8529ARZ- REEL