The MC33201/2/4 family of operational amplifiers provide rail−to−rail operation on both the input and output. The inputs can be driven as high as 200 mV beyond the supply rails without phase reversal on the outputs, and the output can swing within 50 mV of each rail. This rail−to−rail operation enables the user to make full use of the supply voltage range available. It is designed to work at very low supply voltages ( 0.9 V) yet can operate with a supply of up to +12 V and ground. Output current boosting techniques provide a high output current capability while keeping the drain current of the amplifier to a minimum. Also, the combination of low noise and distortion with a high slew rate and drive capability make this an ideal amplifier for audio applications.
Low Voltage, Single Supply Operation (+1.8 V and Ground to +12 V and Ground)
Input Voltage Range Includes both Supply Rails
Output Voltage Swings within 50 mV of both Rails
No Phase Reversal on the Output for Over−driven Input Signals
High Output Current (ISC = 80 mA, Typ)
PDIP−8
P, VP SUFFIX CASE 626
8
1
SOIC−8
8 D, VD SUFFIX
CASE 751
1
M
Micro8
8
DM SUFFIX
1 CASE 846A
PDIP−14
P, VP SUFFIX CASE 646
Low Supply Current (ID = 0.9 mA, Typ)
600 Q Output Drive Capability
Extended Operating Temperature Ranges (−40 to +105C and −55 to +125C)
Typical Gain Bandwidth Product = 2.2 MHz
NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
14
1
14 1
14
1
SOIC−14 D, VD SUFFIX CASE 751A
TSSOP−14 DTB SUFFIX CASE 948G
See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet.
See general marking information in the device marking section on page 11 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2018 − Rev. 18
1 Publication Order Number:
MC33201/D
MC33201
8
1
All Case Styles
NC NC
Output 1
MC33204
1
All Case Styles
14
Output 4
Inputs
VEE
VCC
5
4
6
3
7
2
Output NC
Inputs 1 1
4
3
2
VCC
5
4 Inputs 4
11
12
13
VEE
10
(Top View)
MC33202
Inputs 2 2 3
7
6
Output 2
Inputs 3
8
9
Output 3
All Case Styles
(Top View)
1
Output 1
3
2
Inputs 1 1
VEE 4 2
VCC
7
8
Output 2
6
5
Inputs 2
(Top View)
VCC
VCC
VEE
VCC
Vin -
Vout
Vin +
VCC
VEE
This device contains 70 active transistors (each amplifier).
(Each Amplifier)
Rating | Symbol | Value | Unit |
Supply Voltage (VCC to VEE) | VS | +13 | V |
Input Differential Voltage Range | VIDR | V | |
VCM | VCC + 0.5 V to VEE − 0.5 V | V | |
Output Short Circuit Duration | ts | sec | |
Maximum Junction Temperature | TJ | +150 | C |
Storage Temperature | Tstg | − 65 to +150 | C |
Maximum Power Dissipation | PD | mW |
DC ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristic | VCC = 2.0 V | VCC = 3.3 V | VCC = 5.0 V | Unit |
Input Offset Voltage | mV | |||
VIO (max) MC33201, NCV33201V | 8.0 | 8.0 | 6.0 | |
MC33202, NCV33202, V | 10 | 10 | 8.0 | |
MC33204, NCV33204, V | 12 | 12 | 10 | |
Output Voltage Swing | ||||
VOH (RL = 10 kQ) VOL (RL = 10 kQ) | 1.9 0.10 | 3.15 0.15 | 4.85 0.15 | Vmin Vmax |
Power Supply Current per Amplifier (ID) | 1.125 | 1.125 | 1.125 | mA |
Specifications at VCC = 3.3 V are guaranteed by the 2.0 V and 5.0 V tests. VEE = GND.
DC ELECTRICAL CHARACTERISTICS (VCC = + 5.0 V, VEE = Ground, TA = 25C, unless otherwise noted.)
Characteristic | Figure | Symbol | Min | Typ | Max | Unit |
Input Offset Voltage (VCM 0 V to 0.5 V, VCM 1.0 V to 5.0 V) MC33201/NCV33201V: TA = + 25C | 3 | ⎮VIO⎮ | − − − − − − − − − | − − − − − − − − − | 6.0 9.0 13 8.0 11 14 10 13 17 | mV |
MC33201: TA = − 40 to +105C | ||||||
MC33201V/NCV33201V: TA = − 55 to +125C | ||||||
MC33202/NCV33202, V: TA = + 25C | ||||||
MC33202/NCV33202: TA = − 40 to +105C | ||||||
MC33202V/NCV33202V: TA = − 55 to +125C (Note 4) | ||||||
MC33204/NCV33204V: TA = + 25C | ||||||
MC33204: TA = − 40 to +105C | ||||||
MC33204V/NCV33204V: TA = − 55 to +125C (Note 4) | ||||||
Input Offset Voltage Temperature Coefficient (RS = 50 Q) TA = − 40 to +105C TA = − 55 to +125C | 4 | VIO/ T | − − | 2.0 2.0 | − − | µV/C |
Input Bias Current (VCM = 0 V to 0.5 V, VCM = 1.0 V to 5.0 V) TA = + 25C TA = − 40 to +105C TA = − 55 to +125C | 5, 6 | ⎮IIB⎮ | − − − | 80 100 − | 200 250 500 | nA |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
The differential input voltage of each amplifier is limited by two internal parallel back−to−back diodes. For additional differential input voltage range, use current limiting resistors in series with the input pins.
The input common mode voltage range is limited by internal diodes connected from the inputs to both supply rails. Therefore, the voltage on either input must not exceed either supply rail by more than 500 mV.
Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. (See Figure 2)
All NCV devices are qualified for Automotive use.
DC ELECTRICAL CHARACTERISTICS (cont.) (VCC = + 5.0 V, VEE = Ground, TA = 25C, unless otherwise noted.)
Characteristic | Figure | Symbol | Min | Typ | Max | Unit |
Input Offset Current (VCM = 0 V to 0.5 V, VCM = 1.0 V to 5.0 V) TA = + 25C TA = − 40 to +105C TA = − 55 to +125C | − | ⎮IIO⎮ | − − − | 5.0 10 − | 50 100 200 | nA |
Common Mode Input Voltage Range | − | VICR | VEE | − | VCC | V |
Large Signal Voltage Gain (VCC = + 5.0 V, VEE = − 5.0 V) RL = 10 kQ RL = 600 Q | 7 | AVOL | 50 25 | 300 250 | − − | kV/V |
Output Voltage Swing (VID = 0.2 V) RL = 10 kQ RL = 10 kQ RL = 600 Q RL = 600 Q | 8, 9, 10 | VOH VOL VOH VOL | 4.85 − 4.75 − | 4.95 0.05 4.85 0.15 | − 0.15 − 0.25 | V |
Common Mode Rejection (Vin = 0 V to 5.0 V) | 11 | CMR | 60 | 90 | − | dB |
Power Supply Rejection Ratio VCC/VEE = 5.0 V/GND to 3.0 V/GND | 12 | PSRR | 500 | 25 | − | µV/V |
Output Short Circuit Current (Source and Sink) | 13, 14 | ISC | 50 | 80 | − | mA |
Power Supply Current per Amplifier (VO = 0 V) TA = − 40 to +105C TA = − 55 to +125C | 15 | ID | − − | 0.9 0.9 | 1.125 1.125 | mA |
AC ELECTRICAL CHARACTERISTICS (VCC = + 5.0 V, VEE = Ground, TA = 25C, unless otherwise noted.)
Characteristic | Figure | Symbol | Min | Typ | Max | Unit |
Slew Rate (VS = 2.5 V, VO = − 2.0 V to + 2.0 V, RL = 2.0 kQ, AV = +1.0) | 16, 26 | SR | 0.5 | 1.0 | − | V/µs |
Gain Bandwidth Product (f = 100 kHz) | 17 | GBW | − | 2.2 | − | MHz |
Gain Margin (RL = 600 Q, CL = 0 pF) | 20, 21, 22 | AM | − | 12 | − | dB |
Phase Margin (RL = 600 Q, CL = 0 pF) | 20, 21, 22 | 0M | − | 65 | − | Deg |
Channel Separation (f = 1.0 Hz to 20 kHz, AV = 100) | 23 | CS | − | 90 | − | dB |
Power Bandwidth (VO = 4.0 Vpp, RL = 600 Q, THD 1 %) | BWP | − | 28 | − | kHz | |
Total Harmonic Distortion (RL = 600 Q, VO = 1.0 Vpp, AV = 1.0) f = 1.0 kHz f = 10 kHz | 24 | THD | − − | 0.002 0.008 | − − | % |
Open Loop Output Impedance (VO = 0 V, f = 2.0 MHz, AV = 10) | ⎮ZO⎮ | − | 100 | − | Q | |
Differential Input Resistance (VCM = 0 V) | Rin | − | 200 | − | kQ | |
Differential Input Capacitance (VCM = 0 V) | Cin | − | 8.0 | − | pF | |
Equivalent Input Noise Voltage (RS = 100 Q) f = 10 Hz f = 1.0 kHz | 25 | en | − − | 25 20 | − − | nV/ Hz |
Equivalent Input Noise Current f = 10 Hz f = 1.0 kHz | 25 | in | − − | 0.8 0.2 | − − | pA/ Hz |
PD(max), MAXIMUM POWER DISSIPATION (mW)
2500
2000
1500
1000
500
0
8 and 14 Pin DIP Pkg
SOIC-8
Pkg
TSSOP-14 Pkg
SO-14 Pkg
40
PERCENTAGE OF AMPLIFIERS (%)
35
30
25
20
15
10
5.0
0
360 amplifiers tested from 3 (MC33204) wafer lots
VCC = + 5.0 V VEE = Gnd
TA = 25C
DIP Package
- 55 - 40 - 25 0 25 50 85 125
-10
- 8.0
- 6.0
- 4.0
- 2.0 0
2.0
4.0
6.0
8.0 10
TA, AMBIENT TEMPERATURE (C)
VIO, INPUT OFFSET VOLTAGE (mV)
50
360 amplifiers tested from 3 (MC33204) wafer lots
40 VCC = + 5.0 V
PERCENTAGE OF AMPLIFIERS (%)
VEE = Gnd TA = 25C
30 DIP Package
20
10
200
, INPUT BIAS CURRENT (nA)
160
120
80
I IB
40
VCM > 1.0 V
VCC = + 5.0 V VEE = Gnd
VCM = 0 V to 0.5 V
0
- 50
- 40
- 30
- 20
-10 0
10 20
30 40 50
0
- 55 - 40 - 25 0 25 70 85 125
V
TC , INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT (µV/C) IO
TA, AMBIENT TEMPERATURE (C)
150
IIB , INPUT BIAS CURRENT (nA)
100
50
0
- 50
-100
-150
- 200
- 250
VCC = 12 V VEE = Gnd TA = 25C
300
AVOL , OPEN LOOP VOLTAGE GAIN (kV/V)
260
220
180
140
100
VCC = + 5.0 V VEE = Gnd RL = 600 Q
VO = 0.5 V to 4.5 V
0 2.0 4.0
6.0 8.0 10 12
- 55 - 40 - 25 0 25 70 85
105
125
VCM, INPUT COMMON MODE VOLTAGE (V)
TA, AMBIENT TEMPERATURE (C)
12
VO, OUTPUT VOLTAGE (Vpp )
10
8.0
RL = 600 Q TA = 25C
VSAT, OUTPUT SATURATION VOLTAGE (V)
TA = 125C
TA = - 55C TA = 25C
VCC VCC
- 0.2 V
6.0
4.0
2.0
0
VCC = + 5.0 V VEE = - 5.0 V
TA = 125C
TA = 25C TA = - 55C
VCC - 0.4 V
VEE + 0.4 V
1.0 | 2.0 | 3.0 4.0 | 5.0 | 6.0 | 0 | 5.0 | 10 | 15 | 20 |
VCC,⎮VEE⎮ SUPPLY VOLTAGE (V) | IL, LOAD CURRENT (mA) |
VEE + 0.2 V VEE
CMR, COMMON MODE REJECTION (dB)
12 100
VO, OUTPUT VOLTAGE (Vpp )
80
9.0
6.0
3.0
0
VCC = + 6.0 V VEE = - 6.0 V RL = 600 Q AV = +1.0
TA = 25C
60
40
VCC = + 6.0 V VEE = - 6.0 V
20 TA = - 55 to +125C
0
1.0 k
10 k
100 k 1.0 M
10 100 1.0 k 10 k 100 k 1.0 M
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
PSR, POWER SUPPLY REJECTION (dB)
120
100
80
60
40
20
0
VCC = + 6.0 V VEE = - 6.0 V
TA = - 55 to +125C
PSR+
PSR-
100
, OUTPUT SHORT CIRCUIT CURRENT (mA)
80
60
40
20
I SC
0
Sink
Source
VCC = + 6.0 V VEE = - 6.0 V TA = 25C
10 100 1.0 k 10 k 100 k 1.0 M 0 1.0 2.0 3.0 4.0 5.0 6.0
f, FREQUENCY (Hz)
⎮Vout⎮, OUTPUT VOLTAGE (V)
, OUTPUT SHORT CIRCUIT CURRENT (mA)
150
125
100
75
50
25
VCC = + 5.0 V VEE = Gnd
Source Sink
2.0
I CC , SUPPLY CURRENT PER AMPLIFIER (mA)
1.6
1.2
0.8
0.4
TA = 125C
TA = 25C
TA = - 55C
I SC
0
- 55 - 40 - 25
0 25 70
85 105
125
0
0 1.0 2.0 3.0 4.0 5.0 6.0
TA, AMBIENT TEMPERATURE (C)
VCC, ⎮VEE⎮, SUPPLY VOLTAGE (V)
2.0
SR, SLEW RATE (V/ s)
1.5
1.0
VCC = + 2.5 V VEE = - 2.5 V VO = 2.0 V
+Slew Rate
-Slew Rate
4.0
VCC = + 2.5 V VEE = - 2.5 V
f = 100 kHz
GBW, GAIN BANDWIDTH PRODUCT (MHz)
3.0
2.0
0.5 1.0
0
- 55 - 40 - 25
0 25 70
85 105
125
0
- 55 - 40 - 25
0 25 70
85 105
125
TA, AMBIENT TEMPERATURE (C)
TA, AMBIENT TEMPERATURE (C)
, OPEN LOOP VOLTAGE GAIN (dB)
0 , EXCESS PHASE (DEGREES)
AVOL, OPEN LOOP VOLTAGE GAIN (dB)
70 40 70
VS = 6.0 V TA = 25C
50 RL = 600 Q 80 50
40
0, EXCESS PHASE (DEGREES)
CL = 0 pF TA = 25C
RL = 600 Q 80
30
10
VOL
-10
A
- 30
1A - Phase, CL = 0 pF 1B - Gain, CL = 0 pF
2A - Phase, CL = 300 pF
2B - Gain, CL = 300 pF
120
1A
2A
160
2B
1B 200
240
30
10
-10
- 30
1A - Phase, VS = 6.0 V
1B - Gain, VS = 6.0 V
2A - Phase, VS = 1.0 V
2B - Gain, VS = 1.0 V
1A 120
2A
160
1B
2B
200
240
10 k 100 k 1.0 M 10 M
f, FREQUENCY (Hz)
10 k 100 k 1.0 M 10 M
f, FREQUENCY (Hz)
Phase Margin
70
0 M, PHASE MARGIN (DEGREES)
60
50
40 VCC = + 6.0 V VEE = - 6.0 V
30 RL = 600 Q CL = 100 pF
20
10
70 75
AM, GAIN MARGIN (dB)
0 M, PHASE MARGIN (DEGREES)
60
60
50
40 45
30 30
20
15
10
75
Phase Margin
AM, GAIN MARGIN (dB)
60
VCC = + 6.0 V 45
VEE = - 6.0 V TA = 25C
30
Gain Margin
Gain Margin 15
0
- 55 - 40 - 25
0 25 70
85 105
0 0
125 10
0
100 1.0 k 10 k 100 k
TA, AMBIENT TEMPERATURE (C)
RT, DIFFERENTIAL SOURCE RESISTANCE (Q)
80
0 M, PHASE MARGIN (DEGREES)
70 Phase Margin 60
50 Gain Margin 40
30
20
10
0
16
VCC = + 6.0 V VEE = - 6.0 V RL = 600 Q AV = 100
TA = 25C
14
12
10
8.0
6.0
4.0
2.0
0
150
AM, GAIN MARGIN (dB)
CS, CHANNEL SEPARATION (dB)
120
90
60
30
0
VCC = + 6.0 V VEE = - 6.0 V VO = 8.0 Vpp TA = 25C
AV = 100
AV = 10
10 100 1.0 k 100 1.0 k 10 k
CL, CAPACITIVE LOAD (pF)
f, FREQUENCY (Hz)
THD, TOTAL HARMONIC DISTORTION (%)
10
1.0
0.1
0.01
0.001
VCC = + 5.0 V TA = 25C
VO = 2.0 Vpp
AV = 1000
AV = 100
AV = 10
AV = 1.0
VEE = - 5.0 V RL = 600 Q
Hz)
50
en , EQUIVALENT INPUT NOISE VOLTAGE (nV/
40
30
Noise Voltage
20
10
Noise Current
0
VCC = + 6.0 V VEE = - 6.0 V TA = 25C
5.0
in , INPUT REFERRED NOISE CURRENT (pA/ Hz)
4.0
3.0
2.0
1.0
0
10 100 1.0 k
f, FREQUENCY (Hz)
10 k
100 k
10 100
1.0 k
f, FREQUENCY (Hz)
10 k 100 k
The MC33201/2/4 family of operational amplifiers are unique in their ability to swing rail−to−rail on both the input and the output with a completely bipolar design. This offers low noise, high output current capability and a wide common mode input voltage range even with low supply voltages. Operation is guaranteed over an extended temperature range and at supply voltages of 2.0 V, 3.3 V and
5.0 V and ground.
Since the common mode input voltage range extends from VCC to VEE, it can be operated with either single or split voltage supplies. The MC33201/2/4 are guaranteed not to latch or phase reverse over the entire common mode range,
however, the inputs should not be allowed to exceed maximum ratings.
Rail−to−rail performance is achieved at the input of the amplifiers by using parallel NPN−PNP differential input stages. When the inputs are within 800 mV of the negative rail, the PNP stage is on. When the inputs are more than 800 mV greater than VEE, the NPN stage is on. This switching of
input pairs will cause a reversal of input bias currents (see
Figure 6). Also, slight differences in offset voltage may be noted between the NPN and PNP pairs. Cross−coupling techniques have been used to keep this change to a minimum.
In addition to its rail−to−rail performance, the output stage is current boosted to provide 80 mA of output current, enabling the op amp to drive 600 Q loads. Because of this high output current capability, care should be taken not to exceed the 150C maximum junction temperature.
VCC = + 6.0 V
VEE = - 6.0 V RL = 600 Q CL = 100 pF TA = 25C
O, OUTPUT VOLTAGE (2.0 mV/DIV)
O, OUTPUT VOLTAGE (50 mV/DIV)
VCC = + 6.0 V
VEE = - 6.0 V
RL = 600 Q
CL = 100 pF
TA = 25C
V
V
t, TIME (5.0 µs/DIV) t, TIME (10 µs/DIV)
VCC = + 6.0 V
VEE = - 6.0 V RL = 600 Q CL = 100 pF AV = 1.0
TA = 25C
V
O, OUTPUT VOLTAGE (2.0 V/DIV)
t, TIME (10 µs/DIV)
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface
between the board and the package. With the correct pad geometry, the packages will self−align when subjected to a solder reflow process.
Operational Amplifier Function | Device | Operating Temperature Range | Package | Shipping† |
Single | MC33201DG | TA= −40 to +105C | SOIC−8 (Pb−Free) | 98 Units / Rail |
MC33201DR2G | 2500 / Tape & Reel | |||
MC33201VDG | TA = −55 to 125C | 98 Units / Rail | ||
MC33201VDR2G | 2500 / Tape & Reel | |||
NCV33201VDR2G | 2500 / Tape & Reel | |||
Dual | MC33202DG | TA= −40 to +105C | SOIC−8 (Pb−Free) | 98 Units / Rail |
MC33202DR2G | 2500 / Tape & Reel | |||
MC33202DMR2G | Micro−8 (Pb−Free) | 4000 / Tape & Reel | ||
NCV33202DMR2G* | ||||
MC33202VDG | TA = −55 to 125C | SOIC−8 (Pb−Free) | 98 Units / Rail | |
MC33202VDR2G | 2500 / Tape & Reel | |||
NCV33202VDR2G* | ||||
Quad | MC33204DG | TA= −40 to +105C | SO−14 (Pb−Free) | 55 Units / Rail |
MC33204DR2G | 2500 Units / Tape & Reel | |||
MC33204DTBG | TSSOP−14 (Pb−Free) | 96 Units / Rail | ||
MC33204DTBR2G | 2500 Units / Tape & Reel | |||
MC33204VDG | TA = −55 to 125C | SO−14 (Pb−Free) | 55 Units / Rail | |
MC33204VDR2G | 2500 Units / Tape & Reel | |||
NCV33204DR2G* | ||||
NCV33204DTBR2G* | TSSOP−14 (Pb−Free) | 2500 Units / Tape & Reel |
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable.
SOIC−8 D SUFFIX CASE 751
8
3320x ALYW
■
1
SOIC−8 VD SUFFIX CASE 751
8
320xV *
ALYW
■
1
PDIP−8 P SUFFIX CASE 626
MC3320xP
AWL YYWWG
8
1
PDIP−8 VP SUFFIX CASE 626
8
MC33202VP
AWL YYWWG
1
Micro−8 DM SUFFIX CASE 846A
3202
8 **
AYW■
■
1
SO−14 D SUFFIX
CASE 751A
14
MC33204DG AWLYWW
1
SO−14 VD SUFFIX CASE 751A
14
PDIP−14 P SUFFIX CASE 646
14
PDIP−14 VP SUFFIX CASE 646
14
TSSOP−14 DTB SUFFIX CASE 948G
14 14
MC33204VDG *
AWLYWW
1
MC33204P AWLYYWWG
1
MC33204VP *
MC33 204V
ALYW■
MC33 204
ALYW■
AWLYYWWG
■
■
1
1 1
x = 1 or 2
A = Assembly Location WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G = Pb−Free Package
■ = Pb−Free Package
(Note: Microdot may be in either location)
*This marking diagram applies to NCV3320xV
**This marking diagram applies to NCV33202DMR2G
P, VP SUFFIX CASE 626−05 ISSUE N
NOTE 8
D A
8
5
E1
1
4
b2 B
E
H
END VIEW
NOTES:
DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
CONTROLLING DIMENSION: INCHES.
DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK- AGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3.
DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH
OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.10 INCH.
DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C.
c
DIMENSION E3 IS MEASURED AT THE LEAD TIPS WITH THE LEADS UNCONSTRAINED.
DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE LEADS, WHERE THE LEADS EXIT THE BODY.
TOP VIEW
e/2 A2
A
L
NOTE 3
WITH LEADS CONSTRAINED NOTE 5
PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE CORNERS).
DIM | INCHES | MILLIMETERS | ||
MIN | MAX | MIN | MAX | |
A | −−−− | 0.210 | −−− | 5.33 |
A1 | 0.015 | −−−− | 0.38 | −−− |
A2 | 0.115 | 0.195 | 2.92 | 4.95 |
b | 0.014 | 0.022 | 0.35 | 0.56 |
b2 | 0.060 TYP | 1.52 TYP | ||
C | 0.008 | 0.014 | 0.20 | 0.36 |
D | 0.355 | 0.400 | 9.02 | 10.16 |
D1 | 0.005 | −−−− | 0.13 | −−− |
E | 0.300 | 0.325 | 7.62 | 8.26 |
E1 | 0.240 | 0.280 | 6.10 | 7.11 |
e | 0.100 BSC | 2.54 BSC | ||
eB | −−−− | 0.430 | −−− | 10.92 |
L | 0.115 | 0.150 | 2.92 | 3.81 |
M | −−−− | 10 | −−− | 10 |
SEATING
A1 PLANE
C M
D1
e eB
SIDE VIEW
8X b
END VIEW
0.010 M | C | A M | B M |
NOTE 6
−X−
A
5
8
B S
1
4
−Y−
G
C
DIM | MILLIMETERS | INCHES | ||
MIN | MAX | MIN | MAX | |
A | 4.80 | 5.00 | 0.189 | 0.197 |
B | 3.80 | 4.00 | 0.150 | 0.157 |
C | 1.35 | 1.75 | 0.053 | 0.069 |
D | 0.33 | 0.51 | 0.013 | 0.020 |
G | 1.27 BSC | 0.050 BSC | ||
H | 0.10 | 0.25 | 0.004 | 0.010 |
J | 0.19 | 0.25 | 0.007 | 0.010 |
K | 0.40° | 1.27° | 0.016° | 0.050° |
M | 0 | 8 | 0 | 8 |
N | 0.25 | 0.50 | 0.010 | 0.020 |
S | 5.80 | 6.20 | 0.228 | 0.244 |
SEATING
0.25 (0.010) M | Y M |
K
N X 45°
NOTES:
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION: MILLIMETER.
DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.
MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07.
−Z−
PLANE
0.10 (0.004)
H D M J
0.25 (0.010) | M | Z | Y | S | X | S |
1.52 0.060
7.0
0.275
4.0
0.155
0.6 0.024
1.270
( )
0.050
SCALE 6:1
mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
HE
PIN 1 ID e
D
E
b 8 PL
CASE 846A−02 ISSUE H
NOTES:
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION: MILLIMETER.
DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
DIM | MILLIMETERS | INCHES | ||||
MIN | NOM | MAX | MIN | NOM | MAX | |
A | −− | −− | 1.10 | −− | −− | 0.043 |
A1 | 0.05 | 0.08 | 0.15 | 0.002 | 0.003 | 0.006 |
b | 0.25 | 0.33 | 0.40 | 0.010 | 0.013 | 0.016 |
c | 0.13 | 0.18 | 0.23 | 0.005 | 0.007 | 0.009 |
D | 2.90 | 3.00 | 3.10 | 0.114 | 0.118 | 0.122 |
E | 2.90 | 3.00 | 3.10 | 0.114 | 0.118 | 0.122 |
e | 0.65 BSC | 0.026 BSC | ||||
L | 0.40 | 0.55 | 0.70 | 0.016 | 0.021 | 0.028 |
HE | 4.75 | 4.90 | 5.05 | 0.187 | 0.193 | 0.199 |
846A-01 OBSOLETE, NEW STANDARD 846A-02.
0.08 (0.003) | M | T | B | S | A | S |
−T− | ||
0.038 (0.0015) |
SEATING PLANE
A
A1 c L
1.04 0.38
8X 0.041 0.015 8X
3.20
0.126
4.24 0.167
5.28 0.208
0.65
6X 0.0256
SCALE 8:1
mm inches
( )
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
D A
14 8
H
E1
1 7
NOTES:
DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
CONTROLLING DIMENSION: INCHES.
E
DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK- AGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3.
DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH
OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.10 INCH.
DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C.
DIMENSION E3 IS MEASURED AT THE LEAD TIPS WITH THE
c LEADS UNCONSTRAINED.
NOTE 8
b2
TOP VIEW
B
A2
A
NOTE 3
L
END VIEW
WITH LEADS CONSTRAINED
NOTE 5
DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE LEADS, WHERE THE LEADS EXIT THE BODY.
PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE CORNERS).
DIM | INCHES | MILLIMETERS | ||
MIN | MAX | MIN | MAX | |
A | −−−− | 0.210 | −−− | 5.33 |
A1 | 0.015 | −−−− | 0.38 | −−− |
A2 | 0.115 | 0.195 | 2.92 | 4.95 |
b | 0.014 | 0.022 | 0.35 | 0.56 |
b2 | 0.060 TYP | 1.52 TYP | ||
C | 0.008 | 0.014 | 0.20 | 0.36 |
D | 0.735 | 0.775 | 18.67 | 19.69 |
D1 | 0.005 | −−−− | 0.13 | −−− |
E | 0.300 | 0.325 | 7.62 | 8.26 |
E1 | 0.240 | 0.280 | 6.10 | 7.11 |
e | 0.100 BSC | 2.54 BSC | ||
eB | −−−− | 0.430 | −−− | 10.92 |
L | 0.115 | 0.150 | 2.92 | 3.81 |
M | −−−− | 10 | −−− | 10 |
SEATING
A1 PLANE
C M
D1
e eB
SIDE VIEW
14X b
END VIEW
0.010 M | C | A M | B M |
NOTE 6
A
D
B
14 8
A3
H E
L
NOTES:
DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
CONTROLLING DIMENSION: MILLIMETERS.
DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION.
DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS.
DIM | MILLIMETERS | INCHES | ||
MIN | MAX | MIN | MAX | |
A | 1.35 | 1.75 | 0.054 | 0.068 |
A1 | 0.10 | 0.25 | 0.004 | 0.010 |
A3 | 0.19 | 0.25 | 0.008 | 0.010 |
b | 0.35 | 0.49 | 0.014 | 0.019 |
D | 8.55 | 8.75 | 0.337 | 0.344 |
E | 3.80 | 4.00 | 0.150 | 0.157 |
e | 1.27 BSC | 0.050 BSC | ||
H | 5.80 | 6.20 | 0.228 | 0.244 |
h | 0.25 | 0.50 | 0.010 | 0.019 |
L | 0.40 | 1.25 | 0.016 | 0.049 |
M | 0 ° | 7 ° | 0 ° | 7 ° |
MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
1 7
0.25 M | B M |
13X b
DETAIL A
0.25 M | C | A S | B S |
h
A X 45 °
DETAIL A
e A1
M
C
SEATING PLANE
6.50
1
14X
1.18
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.15 (0.006)
U S
T
L
PIN 1 IDENT.
0.15 (0.006)
U S
14X K REF
14
1
−V−
2X L/2
A
U S
0.25 (0.010)
V S
T
0.10 (0.004) M
N
8
M
B
−U−
N
7
F DETAIL E
K K1
NOTES:
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION: MILLIMETER.
DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
DIM | MILLIMETERS | INCHES | ||
MIN | MAX | MIN | MAX | |
A | 4.90 | 5.10 | 0.193 | 0.200 |
B | 4.30 | 4.50 | 0.169 | 0.177 |
C | −−− | 1.20 | −−− | 0.047 |
D | 0.05 | 0.15 | 0.002 | 0.006 |
F | 0.50 | 0.75 | 0.020 | 0.030 |
G | 0.65 BSC | 0.026 BSC | ||
H | 0.50 | 0.60 | 0.020 | 0.024 |
J | 0.09 | 0.20 | 0.004 | 0.008 |
J1 | 0.09 | 0.16 | 0.004 | 0.006 |
K | 0.19 | 0.30 | 0.007 | 0.012 |
K1 | 0.19 | 0.25 | 0.007 | 0.010 |
L | 6.40 BSC | 0.252 BSC | ||
M | 0 ° | 8 ° | 0 ° | 8 ° |
DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−.
T
J J1
C
SECTION N−N
−W−
0.10 (0.004)
−T−
D
G
SEATING PLANE
H DETAIL E
7.06
1
0.65
PITCH
14X
0.36
Micro8 is a trademark of International Rectifier.
14X
1.26
DIMENSIONS: MILLIMETERS
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