The NCS20081/2/4 is a family of single, dual and quad Operational Amplifiers (Op Amps) with 1.2 MHz of Gain−Bandwidth Product (GBWP) and draws only 42 µA of Quiescent current. The NCS2008x has Input Offset Voltage of 4 mV and operates from 1.8 V to 5.5 V supply voltage over a wide temperature range (−40C to +125C). The Rail−to−Rail In/Out operation allows the designers to use the entire supply voltage range while taking advantage of the 1.2 MHz GBWP.
5
1
Thus, this family offers superior performance over many industry standard parts. These devices are AEC−Q100 qualified which is denoted by the NCV suffix.
NCS2008x’s low current consumption and low voltage performance in space saving packages, makes them ideal for sensor signal conditioning and low voltage current sensing applications in
M
8
1
Automotive, Consumer and Industrial markets.
Wide Bandwidth: 1.2 MHz
Low Supply Current/ Channel: 42 µA (typ.)
Low Input Offset Voltage: 4 mV (max.)
Wide Supply Range: 1.8 V to 5.5 V
Wide Temperature Range: −40C to +125C
Rail−to−Rail Input and Output
Unity Gain Stable
Available in Single, Dual and Quad Packages
NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
14
1
14
1
6
1
Automotive
Battery Powered/ Portable Application
Sensor Signal Conditioning
Low Voltage Current Sensing
Filters Circuits
Unity Gain Buffer
This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice.
See general marking information in the device marking section on page 2 of this data sheet.
See detailed ordering and shipping information on page 3 of this data sheet.
Semiconductor Components Industries, LLC, 2017
XXM■
XX M■
XXXAYW■ ■ | ||||
5 1
■
■
1
XXXX
XXXXXX ALYW ■ | ||||
8 8
AYW■
XXX YWW
A■
■
1 1
M
XXXXX | |||||||
AWLYWWG | |||||||
14 14
XXXX XXXX
■
ALYW■
1
1
XXXXX = Specific Device Code A = Assembly Location WL, L = Wafer Lot
Y = Year
WW, W = Work Week
G or ■ = Pb−Free Package
(Note: Microdot may be in either location)
NCS20081, NCV20081
OUT 1
+
VSS 2
IN+ 3
5 VDD
−
4 IN−
IN+
2
1
+
VSS
3
−
IN−
VDD
4
5
OUT
VSS 1
NC 2
IN− 3
6 OUT
−
+
5 VDD
4 IN+
SOT23−5 (TSOP−5)
SN2 Pinout
SC70−5, SOT23−5 (TSOP−5)
SQ3, SN3 Pinout
UDFN6 1.6 x 1.6
NCS20084, NCV20084
OUT 1 1
IN− 1 2
IN+ 1 3
NCS20082, NCV20082
8
− 7
+ − 6
VDD OUT 2
IN− 2
OUT 1 1
IN− 1 2 −
IN+ 1 3 +
VDD 4
14
− 13
+ 12
11
OUT 4
IN− 4
IN+ 4 VSS
IN+ 2 5
+ + 10
IN+ 3
VSS 4
+ 5 IN+ 2
IN− 2 6 −
OUT 2 7
− 9 IN− 3
8 OUT 3
Device | Configuration | Automotive | Marking | Package | Shipping† |
NCS20081SQ3T2G | Single | No | AAP | SC70 | Contact local sales office for more information |
NCS20081SN2T1G | AER | SOT23−5/TSOP−5 | |||
NCS20081SN3T1G | AEU | SOT23−5/TSOP−5 | |||
NCS20081MUTAG | AP | UDFN6 | |||
NCV20081SQ3T2G* | Yes | AAP | SC70 | ||
NCV20081SN2T1G* | AER | SOT23−5/TSOP−5 | |||
NCS20082DMR2G | Dual | No | 2K82 | Micro8/MSOP8 | |
NCS20082DR2G | NCS20082 | SOIC−8 | |||
NCS20082DTBR2G | K82 | TSSOP−8 | |||
NCV20082DMR2G* | Yes | 2K82 | Micro8/MSOP8 | ||
NCV20082DR2G* | NCS20082 | SOIC−8 | |||
NCV20082DTBR2G* | K82 | TSSOP−8 | |||
NCS20084_ | Quad** | No | TBD | SOIC−14 | |
NCS20084_ | TBD | SOP−14 | |||
NCS20084_ | TBD | TSSOP−14 | |||
NCV20084_ | Yes | TBD | SOIC−14 | ||
NCV20084_ | TBD | SOP−14 | |||
NCV20084_ | TBD | TSSOP−14 |
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable.
**In Development. Not yet released.
Rating | Symbol | Limit | Unit | |
Supply Voltage (VDD – VSS) (Note 2) | VS | 7 | V | |
Input Voltage | VI | VSS − 0.5 to VDD + 0.5 | V | |
Differential Input Voltage | VID | Vs | V | |
Maximum Input Current | II | 10 | mA | |
Maximum Output Current | IO | 100 | mA | |
PD | 200 | mW | ||
Maximum Junction Temperature | TJ | 150 | C | |
Storage Temperature Range | TSTG | −65 to 150 | C | |
Mounting Temperature (Infrared or Convection – 20 sec) | Tmount | 260 | C | |
Human Body Model | ESDHBM ESDMM ESDCDM | 2000 | V | |
Machine Model | 100 | |||
Charge Device Model | 2000 | |||
ILU | 100 | mA | ||
MSL | Level 1 |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Refer to ELECTRICAL CHARACTERISTICS for Safe Operating Area.
Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150C. Output currents in excess of the maximum output current rating over the long term may adversely affect reliability. Shorting output to either VDD or VSS will adversely affect reliability.
This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (JED-EC sta-ndard: JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115)
Latch−up Current tested per JEDEC standard: JESD78
Moisture Sensitivity Level tested per IPC/JEDEC standard: J
STD
020A
Parameter | Symbol | Channels | Package | Single Layer Board (Note 6) | Multi−Layer Board (Note 7) | Unit |
Junction to Ambient Thermal Resistance | 8JA | Single | SC−70 | 491 | 444 | |
SOT23−5/TSOP−5 | 310 | 247 | ||||
UDFN6 | 278 | 239 | ||||
Dual | Micro8/MSOP8 | 236 | 167 | |||
SOIC−8 | 190 | 131 | ||||
TSSOP−8 | 253 | 194 | ||||
Quad | SOIC−14 | |||||
SOP−14 | ||||||
TSSOP−14 |
C/W
Value based on 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm2 copper area
Value based on 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm2 copper area
Parameter | Symbol | Min | Max | Unit |
Operating Supply Voltage | VS | 1.8 | 5.5 | V |
Differential Input Voltage | VID | VS | V | |
Input Common Mode Range | VICM | VSS – 0.2 | VDD + 0.2 | V |
Ambient Temperature | TA | −40 | 125 | C |
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
Boldface limits apply over the specified temperature range, TA = −40C to 125C. (Note 8)
Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
Input Offset Voltage | VOS | 0.5 | 3.5 | mV | ||
4 | mV | |||||
Offset Voltage Drift | �VOS/�T | 1 | µV/C | |||
IIB | 1 | pA | ||||
1500 | pA | |||||
IOS | 1 | pA | ||||
1100 | pA | |||||
Channel Separation | XTLK | DC | 125 | dB | ||
Differential Input Resistance | RID | 10 | GQ | |||
Common Mode Input Resistance | RIN | 10 | GQ | |||
Differential Input Capacitance | CID | 1 | pF | |||
Common Mode Input Capacitance | CCM | 5 | pF | |||
Common Mode Rejection Ratio | CMRR | VCM = VSS – 0.2 to VDD + 0.2 | 48 | 73 | dB | |
VCM = VSS + 0.2 to VDD − 0.2 | 45 |
Open Loop Voltage Gain | AVOL | 86 | 120 | dB | ||
80 | ||||||
Short Circuit Current | ISC | Output to positive rail, sinking current | 15 | mA | ||
Output to negative rail, sourcing current | 11 | |||||
Output Voltage High | VOH | Voltage output swing from positive rail | 3 | 19 | mV | |
20 | ||||||
Output Voltage Low | VOL | Voltage output swing from negative rail | 3 | 19 | mV | |
20 |
Unity Gain Bandwidth | UGBW | 1.2 | MHz | ||||
Slew Rate at Unity Gain | SR | VID = 1.2 Vpp, Gain = 1 | 0.4 | V/µs | |||
Phase Margin | �m | 60 | | ||||
Gain Margin | Am | 19 | dB | ||||
Settling Time | tS | VIN = 1.2 Vpp, Gain = 1 | Settling time to 0.1% | 5 | µs | ||
Settling time to 0.01% | 6 | ||||||
Open Loop Output Impedance | ZOL | f = 100 Hz | 0.8 | Q |
Total Harmonic Distortion plus Noise | THD+N | VIN = 1.2 Vpp, f = 1 kHz, Av = 1 | 0.005 | % | ||
Input Referred Voltage Noise | en | f = 1 kHz | 30 | nV/Hz | ||
f = 10 kHz | 24 | |||||
Input Referred Current Noise | in | f = 1 kHz | 300 | fA/Hz |
Power Supply Rejection Ratio | PSRR | No Load | 67 | 90 | dB | |
64 | ||||||
Power Supply Quiescent Current | IDD | Per channel, no load | 42 | 60 | µA |
Performance guaranteed over the indicated operating temperature range by design and/or characterization.
Boldface limits apply over the specified temperature range, TA = −40C to 125C. (Note 9)
Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
Input Offset Voltage | VOS | 0.5 | 3.5 | mV | ||
4 | mV | |||||
Offset Voltage Drift | �VOS/�T | 1 | µV/C | |||
IIB | 1 | pA | ||||
1500 | pA | |||||
IOS | 1 | pA | ||||
1100 | pA | |||||
Channel Separation | XTLK | DC | 125 | dB | ||
Differential Input Resistance | RID | 10 | GQ | |||
Common Mode Input Resistance | RIN | 10 | GQ | |||
Differential Input Capacitance | CID | 1 | pF | |||
Common Mode Input Capacitance | CCM | 5 | pF | |||
Common Mode Rejection Ratio | CMRR | VCM = VSS – 0.2 to VDD + 0.2 | 53 | 76 | dB | |
VCM = VSS + 0.2 to VDD − 0.2 | 48 |
Open Loop Voltage Gain | AVOL | 90 | 120 | dB | ||
86 | ||||||
Short Circuit Current | ISC | Output to positive rail, sinking current | 15 | mA | ||
Output to negative rail, sourcing current | 11 | |||||
Output Voltage High | VOH | Voltage output swing from positive rail | 3 | 24 | mV | |
25 | ||||||
Output Voltage Low | VOL | Voltage output swing from negative rail | 3 | 24 | mV | |
25 |
Unity Gain Bandwidth | UGBW | 1.2 | MHz | ||||
Slew Rate at Unity Gain | SR | VIN = 2.5 Vpp, Gain = 1 | 0.4 | V/µs | |||
Phase Margin | �m | 60 | | ||||
Gain Margin | Am | 18 | dB | ||||
Settling Time | tS | VIN = 2.5 Vpp, Gain = 1 | Settling time to 0.1% | 5 | µs | ||
Settling time to 0.01% | 6 | ||||||
Open Loop Output Impedance | ZOL | f = 100 Hz | 0.8 | Q |
Total Harmonic Distortion plus Noise | THD+N | VIN = 2.5 Vpp, f = 1 kHz, Av = 1 | 0.005 | % | ||
Input Referred Voltage Noise | en | f = 1 kHz | 30 | nV/Hz | ||
f = 10 kHz | 24 | |||||
Input Referred Current Noise | in | f = 1 kHz | 300 | fA/Hz |
Power Supply Rejection Ratio | PSRR | No Load | 67 | 90 | dB | |
64 | ||||||
Power Supply Quiescent Current | IDD | Per channel, no load | 42 | 60 | µA |
Performance guaranteed over the indicated operating temperature range by design and/or characterization.
TA = 25C; RL 10 kQ; VCM = VOUT = mid−supply unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = −40C to 125C. (Note 10)
Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
Input Offset Voltage | VOS | 0.5 | 3.5 | mV | ||
4 | mV | |||||
Offset Voltage Drift | �VOS/�T | 1 | µV/C | |||
IIB | 1 | pA | ||||
1500 | pA | |||||
IOS | 1 | pA | ||||
1100 | pA | |||||
Channel Separation | XTLK | DC | 125 | dB | ||
Differential Input Resistance | RID | 10 | GQ | |||
Common Mode Input Resistance | RIN | 10 | GQ | |||
Differential Input Capacitance | CID | 1 | pF | |||
Common Mode Input Capacitance | CCM | 5 | pF | |||
Common Mode Rejection Ratio | CMRR | VCM = VSS – 0.2 to VDD + 0.2 | 55 | 79 | dB | |
VCM = VSS + 0.2 to VDD − 0.2 | 51 |
Open Loop Voltage Gain | AVOL | 90 | 120 | dB | ||
86 | ||||||
Short Circuit Current | ISC | Output to positive rail, sinking current | 15 | mA | ||
Output to negative rail, sourcing current | 11 | |||||
Output Voltage High | VOH | Voltage output swing from positive rail | 3 | 24 | mV | |
25 | ||||||
Output Voltage Low | VOL | Voltage output swing from negative rail | 3 | 24 | mV | |
25 |
Unity Gain Bandwidth | UGBW | 1.2 | MHz | ||||
Slew Rate at Unity Gain | SR | VID = 5 Vpp, Gain = 1 | 0.4 | V/µs | |||
Phase Margin | �m | 60 | | ||||
Gain Margin | Am | 17 | dB | ||||
Settling Time | tS | VIN = 5 Vpp, Gain = 1 | Settling time to 0.1% | 5 | µs | ||
Settling time to 0.01% | 6 | ||||||
Open Loop Output Impedance | ZOL | f = 100 Hz | 0.8 | Q |
Total Harmonic Distortion plus Noise | THD+N | VIN = 5 Vpp, f = 1 kHz, Av = 1 | 0.005 | % | ||
Input Referred Voltage Noise | en | f = 1 kHz | 30 | nV/Hz | ||
f = 10 kHz | 24 | |||||
Input Referred Current Noise | in | f = 1 kHz | 300 | fA/Hz |
Power Supply Rejection Ratio | PSRR | No Load | 67 | 90 | dB | |
64 | ||||||
Power Supply Quiescent Current | IDD | Per channel, no load | 48 | 70 | µA |
Performance guaranteed over the indicated operating temperature range by design and/or characterization.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
60
SUPPLY CURRENT (µA)
50
T = 25C
T = 125C
60
SUPPLY CURRENT (µA)
50 VS = 5.5 V
VS = 3.3 V
40 40
30 T = −40C 30 VS = 1.8 V
20 20
10 10
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
−40
−20 0
20 40 60
80 100
120
140
SUPPLY VOLTAGE (V) TEMPERATURE (C)
0.8
OFFSET VOLTAGE (mV)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
T = −40C T = 25C
T = 125C
0.8
OFFSET VOLTAGE (mV)
VS = 1.8 V | ||||||||
VS = 3.3 V | ||||||||
VS = 5.5 V | ||||||||
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
−40
−20 0
20 40 60
80 100
120
140
SUPPLY VOLTAGE (V) TEMPERATURE (C)
4
3 VS = 5.5 V
OFFSET VOLTAGE (mV)
10 units
2
1
0
−1
−2
−3
−4
140
120
100
GAIN (dB)
80
60
40
20
0
−20
Gain
RL = 10 kQ CL = 15 pF T = 25C
Phase Margin
180
PHASE MARGIN ()
135
90
45
0
−2.75 −2.00
−1.25
−0.50 0
0.50
1.25
2.00
2.75
1 10
100
1k 10k
100k 1M
10M
100M
COMMON MODE VOLTAGE (V) FREQUENCY (Hz)
60
VS = 5.5 V
50 RL = 10 kQ
PHASE MARGIN ()
T = 25C
40
100
10
THD+N (%)
1
VS = 5.5 V
fIN = 1 kHz AV = 1
30 0.1
20 0.01
10 0.001
0
0 100
200
300
400
500
0.0001
0.01
0.1 1
CAPACITIVE LOAD (pF) OUTPUT VOLTAGE (Vpp)
1
THD+N (%)
0.1
0.01
AV = 1
VS = 1.8 V
VS = 3.3 V VS = 5.5 V
600
VOLTAGE NOISE (nV/Hz)
500
400
300
200
VS = 5.5 V
100
0.001
10
100 1k
10k
100k
0
1 10
100 1k
10k
100k
FREQUENCY (Hz) FREQUENCY (Hz)
900
CURRENT NOISE (fA/Hz)
800
700
600
500
400
300
200
100
0
VS = 5.5 V
120
100
PSRR (dB)
80
60
40
20
0
VS = 5.5 V, PSRR+
VS = 5.5 V, PSRR−
VS = 1.8 V, PSRR+ VS = 1.8 V, PSRR−
1 10
100 1k
10k
100k
10 100 1k
10k
100k 1M
FREQUENCY (Hz) FREQUENCY (Hz)
120
100
CMRR (dB)
80
60
VS = 5.5 V
VS = 1.8 V
VS = 3.3 V
500
OUTPUT VOLTAGE TO POSITIVE RAIL (mV)
AV = 1 VS = 1.8 V
400
300
200
40
20 100
VS = 3.3 V VS = 5.5 V
0
10 100
1k 10k
100k 1M
0
0 2 4
6 8 10 12
FREQUENCY (Hz) OUTPUT CURRENT (mA)
OUTPUT VOLTAGE TO NEGATIVE RAIL (mV)
500
400
300
200
100
0
VS = 1.8 V
VS = 3.3 V
VS = 5.5 V
0.10
0.08
0.06
VOLTAGE (V)
0.04
0.02
0
−0.02
−0.04
−0.06
−0.08
−0.10
Input
CL = 10 pF CL = 100 pF
0 2.5
5.0
7.5
10.0
12.5
15.0
−2 −1 0
1 2 3
4 5 6
OUTPUT CURRENT (mA) TIME (µs)
0.10
Input
0.08 CL = 10 pF
1.0
0.8
Input
Output
0.06
VOLTAGE (V)
0.04
0.02
0
−0.02
−0.04
−0.06
−0.08
−0.10
CL = 100 pF
0.6
VOLTAGE (V)
0.4
0.2
0
−0.2
−0.4
−0.6
−0.8
−1.0
−2 −1 0
1 2 3
4 5 6
−5.0
−2.5 0
2.5
5.0
7.5
10.0
12.5 15.0
17.5
TIME (µs) TIME (µs)
2.0
1.5
1.0
VOLTAGE (V)
0.5
0
−0.5
−1.0
−1.5
−2.0
Input
Output
600
IIB+ | ||||||||
IIB− | ||||||||
IOS | ||||||||
500
CURRENT (pA)
400
300
200
100
0
−100
−2.5 0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
−40
−20 0
20 40 60
80 100
120
140
TIME (µs) TEMPERATURE (C)
6 6
4 4
CURRENT (pA)
2 IIB+
0
−2
−4
2
VOLTAGE (µV)
IIB−
0
IOS −2
−4
−6
0 0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
−6
0 1 2 3
4 5 6 7
8 9 10
COMMON MODE VOLTAGE (V) TIME (s)
CHANNEL SEPARATION (dB)
−60
−80
−100
−120
10k 1k 100
OUTPUT IMPEDANCE (Q)
10
1
0.1
AV = 1
VS = 1.8 V
VS = 5.5 V
−140
100 1k
10k
100k
1M 10M
0.01
10
100 1k
10k
100k 1M
FREQUENCY (Hz) FREQUENCY (Hz)
0.6
0.5
SLEW RATE (V/µs)
0.4
0.3
SR+
SR−
0.2
0.1
0
−40
−20 0
20 40 60
80 100
120
140
TEMPERATURE (C)
CASE 419A−02 ISSUE L
5
4
1
2
3
0.2 (0.008) M | B M |
NOTES:
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
419A−01 OBSOLETE. NEW STANDARD 419A−02.
S A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
DIM | INCHES | MILLIMETERS | ||
MIN | MAX | MIN | MAX | |
A | 0.071 | 0.087 | 1.80 | 2.20 |
B | 0.045 | 0.053 | 1.15 | 1.35 |
C | 0.031 | 0.043 | 0.80 | 1.10 |
D | 0.004 | 0.012 | 0.10 | 0.30 |
G | 0.026 BSC | 0.65 BSC | ||
H | --- | 0.004 | --- | 0.10 |
J | 0.004 | 0.010 | 0.10 | 0.25 |
K | 0.004 | 0.012 | 0.10 | 0.30 |
N | 0.008 REF | 0.20 REF | ||
S | 0.079 | 0.087 | 2.00 | 2.20 |
H K
0.50 0.0197
0.65 0.025
( )
0.40 0.0157
0.65 0.025
1.9
0.0748
SCALE 20:1
mm inches
NOTE 5
T
0.10
2X
CASE 483
ISSUE L NOTES:
G AND TOLERANCING PER ASME Y14.5M, 1994.
0.20 | C | A | B |
G DIMENSION: MILLIMETERS.
LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
T
0.20
5 4
1 2 3
2X B S
DETAIL Z
S A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A.
CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY.
DIM | MILLIMETERS | |
MIN | MAX | |
A | 3.00 BSC | |
B | 1.50 BSC | |
C | 0.90 | 1.10 |
D | 0.25 | 0.50 |
G | 0.95 BSC | |
H | 0.01 | 0.10 |
J | 0.10 | 0.26 |
K | 0.20 | 0.60 |
M | 0 ° | 10 ° |
S | 2.50 | 3.00 |
DETAIL Z
0.05
SEATING PLANE
1.9 0.074
0.95
0.037
1.0
0.039
2.4
0.094
0.7
0.028
SCALE 10:1
mm inches
( )
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
CASE 517AP ISSUE O
C
2X B
0.10
PIN ONE E
NOTES:
DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
CONTROLLING DIMENSION: MILLIMETERS.
DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM TERMINAL.
COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.
0.10
REFERENCE 2X
0.05 C
C
DETAIL B
OPTIONAL CONSTRUCTION
EXPOSED Cu
MOLD CMPD
DIM | MILLIMETERS | |
MIN | MAX | |
A | 0.45 | 0.55 |
A1 | 0.00 | 0.05 |
A3 | 0.13 REF | |
b | 0.20 | 0.30 |
D | 1.60 BSC | |
E | 1.60 BSC | |
e | 0.50 BSC | |
D2 | 1.10 | 1.30 |
E2 | 0.45 | 0.65 |
K | 0.20 | −−− |
L | 0.20 | 0.40 |
L1 | 0.00 | 0.15 |
6X 0.05 C
DETAIL A 6X L
1 3
SEATING PLANE
OPTIONAL CONSTRUCTION
1.26
6X K 6
0.10 | C | A | B | |
0.05 | C |
5 6X b
6X
0.52
0.61
1.90
NOTE 3
1
0.50 PITCH
6X
0.32
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
PIN 1 ID e
NOTES:
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION: MILLIMETER.
DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
846A-01 OBSOLETE, NEW STANDARD 846A-02.
0.08 (0.003) | M | T | B | S | A | S |
−T− | ||
0.038 (0.0015) |
SEATING PLANE
DIM | MILLIMETERS | INCHES | ||||
MIN | NOM | MAX | MIN | NOM | MAX | |
A | −− | −− | 1.10 | −− | −− | 0.043 |
A1 | 0.05 | 0.08 | 0.15 | 0.002 | 0.003 | 0.006 |
b | 0.25 | 0.33 | 0.40 | 0.010 | 0.013 | 0.016 |
c | 0.13 | 0.18 | 0.23 | 0.005 | 0.007 | 0.009 |
D | 2.90 | 3.00 | 3.10 | 0.114 | 0.118 | 0.122 |
E | 2.90 | 3.00 | 3.10 | 0.114 | 0.118 | 0.122 |
e | 0.65 BSC | 0.026 BSC | ||||
L | 0.40 | 0.55 | 0.70 | 0.016 | 0.021 | 0.028 |
HE | 4.75 | 4.90 | 5.05 | 0.187 | 0.193 | 0.199 |
A1 c L
8X
8X 0.48 0.80
5.25
0.65
PITCH
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.25 (0.010) M | Y M |
8 5
NOTES:
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION: MILLIMETER.
DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.
MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
DIMENSION D DOES NOT INCLUDE DAMBAR
1
4
DIM | MILLIMETERS | INCHES | ||
MIN | MAX | MIN | MAX | |
A | 4.80 | 5.00 | 0.189 | 0.197 |
B | 3.80 | 4.00 | 0.150 | 0.157 |
C | 1.35 | 1.75 | 0.053 | 0.069 |
D | 0.33 | 0.51 | 0.013 | 0.020 |
G | 1.27 BSC | 0.050 BSC | ||
H | 0.10 | 0.25 | 0.004 | 0.010 |
J | 0.19 | 0.25 | 0.007 | 0.010 |
K | 0.40° | 1.27° | 0.016° | 0.050° |
M | 0 | 8 | 0 | 8 |
N | 0.25 | 0.50 | 0.010 | 0.020 |
S | 5.80 | 6.20 | 0.228 | 0.244 |
SEATING
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07.
PLANE
0.10 (0.004)
0.25 (0.010) | M | Z | Y | S | X | S |
1.52 0.060
STYLE 11:
PIN 1. SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
7.0
0.275
4.0
0.155
0.6 0.024
1.270
( )
0.050
SCALE 6:1
mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.20 (0.008)
U S
T
U S
T
0.20 (0.008)
0.076 (0.003)
SEATING PLANE
2X L/2
PIN 1 IDENT
8x K REF
1
5
8
4
0.10 (0.004) | M | T | U | S | V | S |
NOTES:
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION: MILLIMETER.
DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-.
0.25 (0.010)
DIM | MILLIMETERS | INCHES | ||
MIN | MAX | MIN | MAX | |
A | 2.90 | 3.10 | 0.114 | 0.122 |
B | 4.30 | 4.50 | 0.169 | 0.177 |
C | --- | 1.10 | --- | 0.043 |
D | 0.05 | 0.15 | 0.002 | 0.006 |
F | 0.50 | 0.70 | 0.020 | 0.028 |
G | 0.65 BSC | 0.026 BSC | ||
J | 0.09 | 0.20 | 0.004 | 0.008 |
J1 | 0.09 | 0.16 | 0.004 | 0.006 |
K | 0.19 | 0.30 | 0.007 | 0.012 |
K1 | 0.19 | 0.25 | 0.007 | 0.010 |
L | 6.40 BSC | 0.252 BSC | ||
M | ° 0 | ° 8 | ° 0 | ° 8 |
14 8
H E
NOTES:
DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
CONTROLLING DIMENSION: MILLIMETERS.
DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION.
DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS.
DIM | MILLIMETERS | INCHES | ||
MIN | MAX | MIN | MAX | |
A | 1.35 | 1.75 | 0.054 | 0.068 |
A1 | 0.10 | 0.25 | 0.004 | 0.010 |
A3 | 0.19 | 0.25 | 0.008 | 0.010 |
b | 0.35 | 0.49 | 0.014 | 0.019 |
D | 8.55 | 8.75 | 0.337 | 0.344 |
E | 3.80 | 4.00 | 0.150 | 0.157 |
e | 1.27 BSC | 0.050 BSC | ||
H | 5.80 | 6.20 | 0.228 | 0.244 |
h | 0.25 | 0.50 | 0.010 | 0.019 |
L | 0.40 | 1.25 | 0.016 | 0.049 |
M | 0 ° | 7 ° | 0 ° | 7 ° |
MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
1 7
0.25 M | B M |
13X b
0.25 M | C | A S | B S |
DETAIL A
X 45 °
DETAIL A
e A1
SEATING PLANE
6.50
1
14X
1.18
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.15 (0.006)
U S
T
PIN 1 IDENT.
0.15 (0.006)
U S
14X K REF
14
1
2X L/2
U S
0.25 (0.010)
V S
T
0.10 (0.004) M
8
7
NOTES:
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION: MILLIMETER.
DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
DIM | MILLIMETERS | INCHES | ||
MIN | MAX | MIN | MAX | |
A | 4.90 | 5.10 | 0.193 | 0.200 |
B | 4.30 | 4.50 | 0.169 | 0.177 |
C | −−− | 1.20 | −−− | 0.047 |
D | 0.05 | 0.15 | 0.002 | 0.006 |
F | 0.50 | 0.75 | 0.020 | 0.030 |
G | 0.65 BSC | 0.026 BSC | ||
H | 0.50 | 0.60 | 0.020 | 0.024 |
J | 0.09 | 0.20 | 0.004 | 0.008 |
J1 | 0.09 | 0.16 | 0.004 | 0.006 |
K | 0.19 | 0.30 | 0.007 | 0.012 |
K1 | 0.19 | 0.25 | 0.007 | 0.010 |
L | 6.40 BSC | 0.252 BSC | ||
M | 0 ° | 8 ° | 0 ° | 8 ° |
DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−.
T
0.10 (0.004)
SEATING PLANE
H DETAIL E
7.06
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
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