MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204


Low Voltage, Rail-to-Rail Operational Amplifiers

The MC33201/2/4 family of operational amplifiers provide rail−to−rail operation on both the input and output. The inputs can be driven as high as 200 mV beyond the supply rails without phase reversal on the outputs, and the output can swing within 50 mV of each rail. This rail−to−rail operation enables the user to make full use of the supply voltage range available. It is designed to work at very low supply voltages ( 0.9 V) yet can operate with a supply of up to +12 V and ground. Output current boosting techniques provide a high output current capability while keeping the drain current of the amplifier to a minimum. Also, the combination of low noise and distortion with a high slew rate and drive capability make this an ideal amplifier for audio applications.

Features

14

1


14 1


14

1


SOIC14 D, VD SUFFIX CASE 751A


TSSOP14 DTB SUFFIX CASE 948G


ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet.


DEVICE MARKING INFORMATION

See general marking information in the device marking section on page 11 of this data sheet.



Semiconductor Components Industries, LLC, 2014

July, 2018 Rev. 18


1 Publication Order Number:

MC33201/D



MC33201

8

1

All Case Styles

NC NC

PIN CONNECTIONS


Output 1


MC33204

1

All Case Styles


14

Output 4


Inputs


VEE


VCC

5

4

6

3

7

2

Output NC

Inputs 1 1

4

3

2

VCC

5


4 Inputs 4


11

12

13

VEE

10

(Top View)


MC33202

Inputs 2 2 3

7

6

Output 2

Inputs 3

8

9

Output 3

All Case Styles

(Top View)


1

Output 1

3

2

Inputs 1 1

VEE 4 2


VCC

7

8

Output 2


6

5

Inputs 2


(Top View)


VCC


VCC

VEE


VCC


Vin -


Vout



Vin +


VCC


VEE


This device contains 70 active transistors (each amplifier).


Figure 1. Circuit Schematic

(Each Amplifier)


MAXIMUM RATINGS


Rating

Symbol

Value

Unit

Supply Voltage (VCC to VEE)

VS

+13

V

Input Differential Voltage Range

VIDR

Note 1

V

Common Mode Input Voltage Range (Note 2)

VCM

VCC + 0.5 V to VEE 0.5 V

V

Output Short Circuit Duration

ts

Note 3

sec

Maximum Junction Temperature

TJ

+150

C

Storage Temperature

Tstg

65 to +150

C

Maximum Power Dissipation

PD

Note 3

mW

DC ELECTRICAL CHARACTERISTICS (TA = 25C)

Characteristic

VCC = 2.0 V

VCC = 3.3 V

VCC = 5.0 V

Unit

Input Offset Voltage




mV

VIO (max)

MC33201, NCV33201V


8.0


8.0


6.0


MC33202, NCV33202, V

10

10

8.0


MC33204, NCV33204, V

12

12

10


Output Voltage Swing





VOH (RL = 10 kQ) VOL (RL = 10 kQ)

1.9

0.10

3.15

0.15

4.85

0.15

Vmin Vmax

Power Supply Current per Amplifier (ID)


1.125


1.125


1.125

mA

Specifications at VCC = 3.3 V are guaranteed by the 2.0 V and 5.0 V tests. VEE = GND.

DC ELECTRICAL CHARACTERISTICS (VCC = + 5.0 V, VEE = Ground, TA = 25C, unless otherwise noted.)

Characteristic

Figure

Symbol

Min

Typ

Max

Unit

Input Offset Voltage (VCM 0 V to 0.5 V, VCM 1.0 V to 5.0 V) MC33201/NCV33201V: TA = + 25C

3

VIO




6.0

9.0

13

8.0

11

14

10

13

17

mV

MC33201: TA = 40 to +105C




MC33201V/NCV33201V: TA = 55 to +125C




MC33202/NCV33202, V: TA = + 25C




MC33202/NCV33202: TA = 40 to +105C




MC33202V/NCV33202V: TA = 55 to +125C (Note 4)




MC33204/NCV33204V: TA = + 25C




MC33204: TA = 40 to +105C




MC33204V/NCV33204V: TA = 55 to +125C (Note 4)




Input Offset Voltage Temperature Coefficient (RS = 50 Q) TA = 40 to +105C

TA = 55 to +125C

4

VIO/ T



2.0

2.0


µV/C

Input Bias Current (VCM = 0 V to 0.5 V, VCM = 1.0 V to 5.0 V) TA = + 25C

TA = 40 to +105C TA = 55 to +125C

5, 6

IIB



80

100


200

250

500

nA

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

  1. The differential input voltage of each amplifier is limited by two internal parallel backtoback diodes. For additional differential input voltage range, use current limiting resistors in series with the input pins.

  2. The input common mode voltage range is limited by internal diodes connected from the inputs to both supply rails. Therefore, the voltage on either input must not exceed either supply rail by more than 500 mV.

  3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. (See Figure 2)

  4. All NCV devices are qualified for Automotive use.


DC ELECTRICAL CHARACTERISTICS (cont.) (VCC = + 5.0 V, VEE = Ground, TA = 25C, unless otherwise noted.)

Characteristic

Figure

Symbol

Min

Typ

Max

Unit

Input Offset Current (VCM = 0 V to 0.5 V, VCM = 1.0 V to 5.0 V) TA = + 25C

TA = 40 to +105C TA = 55 to +125C

IIO



5.0

10


50

100

200

nA

Common Mode Input Voltage Range

VICR

VEE

VCC

V

Large Signal Voltage Gain (VCC = + 5.0 V, VEE = 5.0 V) RL = 10 kQ

RL = 600 Q

7

AVOL


50

25


300

250


kV/V

Output Voltage Swing (VID = 0.2 V) RL = 10 kQ

RL = 10 kQ RL = 600 Q RL = 600 Q

8, 9, 10


VOH VOL VOH VOL


4.85

4.75


4.95

0.05

4.85

0.15


0.15

0.25

V

Common Mode Rejection (Vin = 0 V to 5.0 V)

11

CMR

60

90

dB

Power Supply Rejection Ratio

VCC/VEE = 5.0 V/GND to 3.0 V/GND

12

PSRR


500


25


µV/V

Output Short Circuit Current (Source and Sink)

13, 14

ISC

50

80

mA

Power Supply Current per Amplifier (VO = 0 V) TA = 40 to +105C

TA = 55 to +125C

15

ID



0.9

0.9


1.125

1.125

mA

AC ELECTRICAL CHARACTERISTICS (VCC = + 5.0 V, VEE = Ground, TA = 25C, unless otherwise noted.)

Characteristic

Figure

Symbol

Min

Typ

Max

Unit

Slew Rate

(VS = 2.5 V, VO = 2.0 V to + 2.0 V, RL = 2.0 kQ, AV = +1.0)

16, 26

SR


0.5


1.0


V/µs

Gain Bandwidth Product (f = 100 kHz)

17

GBW

2.2

MHz

Gain Margin (RL = 600 Q, CL = 0 pF)

20, 21, 22

AM

12

dB

Phase Margin (RL = 600 Q, CL = 0 pF)

20, 21, 22

0M

65

Deg

Channel Separation (f = 1.0 Hz to 20 kHz, AV = 100)

23

CS

90

dB

Power Bandwidth (VO = 4.0 Vpp, RL = 600 Q, THD 1 %)


BWP

28

kHz

Total Harmonic Distortion (RL = 600 Q, VO = 1.0 Vpp, AV = 1.0) f = 1.0 kHz

f = 10 kHz

24

THD



0.002

0.008


%

Open Loop Output Impedance

(VO = 0 V, f = 2.0 MHz, AV = 10)


ZO



100


Q

Differential Input Resistance (VCM = 0 V)


Rin

200

kQ

Differential Input Capacitance (VCM = 0 V)


Cin

8.0

pF

Equivalent Input Noise Voltage (RS = 100 Q) f = 10 Hz

f = 1.0 kHz

25

en



25

20


nV/ Hz

Equivalent Input Noise Current f = 10 Hz

f = 1.0 kHz

25

in



0.8

0.2


pA/ Hz



PD(max), MAXIMUM POWER DISSIPATION (mW)

2500


2000


1500


1000


500


0


8 and 14 Pin DIP Pkg


SOIC-8

Pkg


TSSOP-14 Pkg

SO-14 Pkg


40

PERCENTAGE OF AMPLIFIERS (%)

35

30

25

20


15

10

5.0

0


360 amplifiers tested from 3 (MC33204) wafer lots

VCC = + 5.0 V VEE = Gnd

TA = 25C

DIP Package

- 55 - 40 - 25 0 25 50 85 125

-10

- 8.0

- 6.0

- 4.0

- 2.0 0

2.0

4.0

6.0

8.0 10

TA, AMBIENT TEMPERATURE (C)

Figure 2. Maximum Power Dissipation versus Temperature

VIO, INPUT OFFSET VOLTAGE (mV)


Figure 3. Input Offset Voltage Distribution


50

360 amplifiers tested from 3 (MC33204) wafer lots

40 VCC = + 5.0 V

PERCENTAGE OF AMPLIFIERS (%)

VEE = Gnd TA = 25C

30 DIP Package


20


10

200


, INPUT BIAS CURRENT (nA)

160


120


80


I IB

40


VCM > 1.0 V


VCC = + 5.0 V VEE = Gnd


VCM = 0 V to 0.5 V


0

- 50


- 40


- 30


- 20


-10 0


10 20


30 40 50

0

- 55 - 40 - 25 0 25 70 85 125


V

TC , INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT (µV/C) IO


Figure 4. Input Offset Voltage Temperature Coefficient Distribution

TA, AMBIENT TEMPERATURE (C)


Figure 5. Input Bias Current versus Temperature


150


IIB , INPUT BIAS CURRENT (nA)

100


50


0


- 50


-100


-150


- 200


- 250


VCC = 12 V VEE = Gnd TA = 25C

300


AVOL , OPEN LOOP VOLTAGE GAIN (kV/V)

260


220


180


140


100


VCC = + 5.0 V VEE = Gnd RL = 600 Q

VO = 0.5 V to 4.5 V

0 2.0 4.0

6.0 8.0 10 12

- 55 - 40 - 25 0 25 70 85

105

125

VCM, INPUT COMMON MODE VOLTAGE (V)


Figure 6. Input Bias Current versus Common Mode Voltage

TA, AMBIENT TEMPERATURE (C)

Figure 7. Open Loop Voltage Gain versus Temperature


12


VO, OUTPUT VOLTAGE (Vpp )

10


8.0


RL = 600 Q TA = 25C


VSAT, OUTPUT SATURATION VOLTAGE (V)

TA = 125C


TA = - 55C TA = 25C

VCC VCC


- 0.2 V


6.0


4.0


2.0


0


VCC = + 5.0 V VEE = - 5.0 V

TA = 125C


TA = 25C TA = - 55C

VCC - 0.4 V


VEE + 0.4 V


1.0

2.0

3.0 4.0

5.0

6.0

0

5.0

10

15

20



VCC,VEE SUPPLY VOLTAGE (V)





IL, LOAD CURRENT (mA)



VEE + 0.2 V VEE


Figure 8. Output Voltage Swing versus Supply Voltage

Figure 9. Output Saturation Voltage versus Load Current


CMR, COMMON MODE REJECTION (dB)

12 100


VO, OUTPUT VOLTAGE (Vpp )

80

9.0



6.0


3.0


0


VCC = + 6.0 V VEE = - 6.0 V RL = 600 Q AV = +1.0

TA = 25C

60


40

VCC = + 6.0 V VEE = - 6.0 V

20 TA = - 55 to +125C

0

1.0 k

10 k

100 k 1.0 M

10 100 1.0 k 10 k 100 k 1.0 M

f, FREQUENCY (Hz)


Figure 10. Output Voltage versus Frequency

f, FREQUENCY (Hz)


Figure 11. Common Mode Rejection versus Frequency


PSR, POWER SUPPLY REJECTION (dB)

120


100


80


60


40


20


0


VCC = + 6.0 V VEE = - 6.0 V

TA = - 55 to +125C


PSR+


PSR-

100


, OUTPUT SHORT CIRCUIT CURRENT (mA)

80


60


40


20


I SC

0


Sink


Source


VCC = + 6.0 V VEE = - 6.0 V TA = 25C

10 100 1.0 k 10 k 100 k 1.0 M 0 1.0 2.0 3.0 4.0 5.0 6.0

f, FREQUENCY (Hz)


Figure 12. Power Supply Rejection versus Frequency

Vout, OUTPUT VOLTAGE (V)

Figure 13. Output Short Circuit Current versus Output Voltage



, OUTPUT SHORT CIRCUIT CURRENT (mA)

150


125


100


75


50


25


VCC = + 5.0 V VEE = Gnd


Source Sink


2.0


I CC , SUPPLY CURRENT PER AMPLIFIER (mA)

1.6


1.2


0.8


0.4


TA = 125C


TA = 25C


TA = - 55C


I SC

0

- 55 - 40 - 25


0 25 70


85 105


125

0

0 1.0 2.0 3.0 4.0 5.0 6.0

TA, AMBIENT TEMPERATURE (C)

Figure 14. Output Short Circuit Current versus Temperature

VCC, VEE, SUPPLY VOLTAGE (V)

Figure 15. Supply Current per Amplifier versus Supply Voltage with No Load


2.0


SR, SLEW RATE (V/ s)

1.5


1.0


VCC = + 2.5 V VEE = - 2.5 V VO = 2.0 V


+Slew Rate


-Slew Rate

4.0


VCC = + 2.5 V VEE = - 2.5 V

f = 100 kHz

GBW, GAIN BANDWIDTH PRODUCT (MHz)

3.0


2.0

0.5 1.0



0

- 55 - 40 - 25


0 25 70


85 105


125


0

- 55 - 40 - 25


0 25 70


85 105


125

TA, AMBIENT TEMPERATURE (C)

Figure 16. Slew Rate versus Temperature

TA, AMBIENT TEMPERATURE (C)

Figure 17. Gain Bandwidth Product versus Temperature


, OPEN LOOP VOLTAGE GAIN (dB)

0 , EXCESS PHASE (DEGREES)

AVOL, OPEN LOOP VOLTAGE GAIN (dB)

70 40 70

VS = 6.0 V TA = 25C

50 RL = 600 Q 80 50

40

0, EXCESS PHASE (DEGREES)

CL = 0 pF TA = 25C

RL = 600 Q 80


30


10


VOL

-10


A

- 30


1A - Phase, CL = 0 pF 1B - Gain, CL = 0 pF

2A - Phase, CL = 300 pF

2B - Gain, CL = 300 pF


120

1A

2A

160

2B

1B 200

240


30


10


-10


- 30


1A - Phase, VS = 6.0 V

1B - Gain, VS = 6.0 V

2A - Phase, VS = 1.0 V

2B - Gain, VS = 1.0 V

1A 120

2A

160

1B

2B

200


240

10 k 100 k 1.0 M 10 M

f, FREQUENCY (Hz)


Figure 18. Voltage Gain and Phase versus Frequency

10 k 100 k 1.0 M 10 M

f, FREQUENCY (Hz)


Figure 19. Voltage Gain and Phase versus Frequency


Phase Margin

70


0 M, PHASE MARGIN (DEGREES)

60


50


40 VCC = + 6.0 V VEE = - 6.0 V

30 RL = 600 Q CL = 100 pF

20


10

70 75


AM, GAIN MARGIN (dB)

0 M, PHASE MARGIN (DEGREES)

60

60

50

40 45

30 30

20

15

10

75

Phase Margin


AM, GAIN MARGIN (dB)

60

VCC = + 6.0 V 45

VEE = - 6.0 V TA = 25C

30

Gain Margin

Gain Margin 15

0

- 55 - 40 - 25

0 25 70

85 105

0 0

125 10

0

100 1.0 k 10 k 100 k

TA, AMBIENT TEMPERATURE (C)

Figure 20. Gain and Phase Margin versus Temperature

RT, DIFFERENTIAL SOURCE RESISTANCE (Q)

Figure 21. Gain and Phase Margin versus Differential Source Resistance


80

0 M, PHASE MARGIN (DEGREES)

70 Phase Margin 60

50 Gain Margin 40

30

20

10

0


16

VCC = + 6.0 V VEE = - 6.0 V RL = 600 Q AV = 100

TA = 25C

14

12

10

8.0

6.0

4.0

2.0

0


150


AM, GAIN MARGIN (dB)

CS, CHANNEL SEPARATION (dB)

120


90


60


30


0


VCC = + 6.0 V VEE = - 6.0 V VO = 8.0 Vpp TA = 25C



AV = 100


AV = 10

10 100 1.0 k 100 1.0 k 10 k

CL, CAPACITIVE LOAD (pF)

Figure 22. Gain and Phase Margin versus Capacitive Load

f, FREQUENCY (Hz)


Figure 23. Channel Separation versus Frequency



THD, TOTAL HARMONIC DISTORTION (%)

10


1.0


0.1


0.01


0.001


VCC = + 5.0 V TA = 25C

VO = 2.0 Vpp


AV = 1000

AV = 100


AV = 10


AV = 1.0


VEE = - 5.0 V RL = 600 Q


Hz)

50


en , EQUIVALENT INPUT NOISE VOLTAGE (nV/

40


30


Noise Voltage

20


10

Noise Current

0


VCC = + 6.0 V VEE = - 6.0 V TA = 25C


5.0


in , INPUT REFERRED NOISE CURRENT (pA/ Hz)

4.0


3.0


2.0


1.0


0

10 100 1.0 k

f, FREQUENCY (Hz)

10 k

100 k

10 100

1.0 k

f, FREQUENCY (Hz)

10 k 100 k

Figure 24. Total Harmonic Distortion versus Frequency

Figure 25. Equivalent Input Noise Voltage and Current versus Frequency


DETAILED OPERATING DESCRIPTION

General Information

The MC33201/2/4 family of operational amplifiers are unique in their ability to swing rail−to−rail on both the input and the output with a completely bipolar design. This offers low noise, high output current capability and a wide common mode input voltage range even with low supply voltages. Operation is guaranteed over an extended temperature range and at supply voltages of 2.0 V, 3.3 V and

5.0 V and ground.

Since the common mode input voltage range extends from VCC to VEE, it can be operated with either single or split voltage supplies. The MC33201/2/4 are guaranteed not to latch or phase reverse over the entire common mode range,

however, the inputs should not be allowed to exceed maximum ratings.

Circuit Information

Rail−to−rail performance is achieved at the input of the amplifiers by using parallel NPN−PNP differential input stages. When the inputs are within 800 mV of the negative rail, the PNP stage is on. When the inputs are more than 800 mV greater than VEE, the NPN stage is on. This switching of

input pairs will cause a reversal of input bias currents (see

Figure 6). Also, slight differences in offset voltage may be noted between the NPN and PNP pairs. Cross−coupling techniques have been used to keep this change to a minimum.

In addition to its rail−to−rail performance, the output stage is current boosted to provide 80 mA of output current, enabling the op amp to drive 600 Q loads. Because of this high output current capability, care should be taken not to exceed the 150C maximum junction temperature.


VCC = + 6.0 V

VEE = - 6.0 V RL = 600 Q CL = 100 pF TA = 25C

O, OUTPUT VOLTAGE (2.0 mV/DIV)

O, OUTPUT VOLTAGE (50 mV/DIV)

VCC = + 6.0 V

VEE = - 6.0 V

RL = 600 Q

CL = 100 pF

TA = 25C


V

V

t, TIME (5.0 µs/DIV) t, TIME (10 µs/DIV)

Figure 26. Noninverting Amplifier Slew Rate Figure 27. Small Signal Transient Response


VCC = + 6.0 V

VEE = - 6.0 V RL = 600 Q CL = 100 pF AV = 1.0

TA = 25C



V

O, OUTPUT VOLTAGE (2.0 V/DIV)

t, TIME (10 µs/DIV)


Figure 28. Large Signal Transient Response


Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface

between the board and the package. With the correct pad geometry, the packages will self−align when subjected to a solder reflow process.


ORDERING INFORMATION


Operational Amplifier Function

Device

Operating Temperature Range

Package

Shipping


Single

MC33201DG

TA= 40 to +105C

SOIC8

(PbFree)

98 Units / Rail

MC33201DR2G

2500 / Tape & Reel

MC33201VDG


TA = 55 to 125C

98 Units / Rail

MC33201VDR2G

2500 / Tape & Reel

NCV33201VDR2G

2500 / Tape & Reel


Dual

MC33202DG


TA= 40 to +105C

SOIC8

(PbFree)

98 Units / Rail

MC33202DR2G

2500 / Tape & Reel

MC33202DMR2G

Micro8 (PbFree)


4000 / Tape & Reel

NCV33202DMR2G*

MC33202VDG


TA = 55 to 125C

SOIC8

(PbFree)

98 Units / Rail

MC33202VDR2G


2500 / Tape & Reel

NCV33202VDR2G*


Quad

MC33204DG


TA= 40 to +105C

SO14

(PbFree)

55 Units / Rail

MC33204DR2G

2500 Units / Tape & Reel

MC33204DTBG

TSSOP14

(PbFree)

96 Units / Rail

MC33204DTBR2G

2500 Units / Tape & Reel

MC33204VDG


TA = 55 to 125C

SO14

(PbFree)

55 Units / Rail

MC33204VDR2G


2500 Units / Tape & Reel

NCV33204DR2G*

NCV33204DTBR2G*

TSSOP14

(PbFree)

2500 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ100 Qualified and PPAP Capable.


MARKING DIAGRAMS


SOIC8 D SUFFIX CASE 751

8

3320x ALYW

1

SOIC8 VD SUFFIX CASE 751

8

320xV *

ALYW

1

PDIP8 P SUFFIX CASE 626

MC3320xP

AWL YYWWG

8


1

PDIP8 VP SUFFIX CASE 626

8

MC33202VP

AWL YYWWG


1

Micro8 DM SUFFIX CASE 846A

3202

8 **


AYW■

1


SO14 D SUFFIX

CASE 751A

14


MC33204DG AWLYWW


1


SO14 VD SUFFIX CASE 751A

14

PDIP14 P SUFFIX CASE 646

14

PDIP14 VP SUFFIX CASE 646

14

TSSOP14 DTB SUFFIX CASE 948G

14 14

MC33204VDG *

AWLYWW


1


MC33204P AWLYYWWG


1

MC33204VP *

MC33 204V

ALYW■

MC33 204

ALYW■

AWLYYWWG


1


1 1


x = 1 or 2

A = Assembly Location WL, L = Wafer Lot

YY, Y = Year

WW, W = Work Week

G = PbFree Package

■ = PbFree Package

(Note: Microdot may be in either location)

*This marking diagram applies to NCV3320xV

**This marking diagram applies to NCV33202DMR2G


PDIP8

P, VP SUFFIX CASE 62605 ISSUE N



NOTE 8

D A


8

5


E1

1

4


b2 B


E

H


END VIEW

NOTES:

  1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

  2. CONTROLLING DIMENSION: INCHES.

  3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK- AGE SEATED IN JEDEC SEATING PLANE GAUGE GS3.

  4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH

    OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.10 INCH.

  5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C.

    c

  6. DIMENSION E3 IS MEASURED AT THE LEAD TIPS WITH THE LEADS UNCONSTRAINED.

  7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE LEADS, WHERE THE LEADS EXIT THE BODY.

    TOP VIEW


    e/2 A2

    A

    L


    NOTE 3

    WITH LEADS CONSTRAINED NOTE 5

  8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE CORNERS).



DIM

INCHES

MILLIMETERS

MIN

MAX

MIN

MAX

A

−−−−

0.210

−−−

5.33

A1

0.015

−−−−

0.38

−−−

A2

0.115

0.195

2.92

4.95

b

0.014

0.022

0.35

0.56

b2

0.060 TYP

1.52 TYP

C

0.008

0.014

0.20

0.36

D

0.355

0.400

9.02

10.16

D1

0.005

−−−−

0.13

−−−

E

0.300

0.325

7.62

8.26

E1

0.240

0.280

6.10

7.11

e

0.100 BSC

2.54 BSC

eB

−−−−

0.430

−−−

10.92

L

0.115

0.150

2.92

3.81

M

−−−−

10

−−−

10

SEATING

A1 PLANE

C M

D1

e eB


SIDE VIEW

8X b

END VIEW


0.010 M

C

A M

B M

NOTE 6



X

A



5


8

B S

1


4

Y


G


C


DIM

MILLIMETERS

INCHES

MIN

MAX

MIN

MAX

A

4.80

5.00

0.189

0.197

B

3.80

4.00

0.150

0.157

C

1.35

1.75

0.053

0.069

D

0.33

0.51

0.013

0.020

G

1.27 BSC

0.050 BSC

H

0.10

0.25

0.004

0.010

J

0.19

0.25

0.007

0.010

K

0.40°

1.27°

0.016°

0.050°

M

0

8

0

8

N

0.25

0.50

0.010

0.020

S

5.80

6.20

0.228

0.244

SEATING

SOIC8 NB CASE 75107 ISSUE AK



0.25 (0.010) M

Y M



K


N X 45°


NOTES:

  1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

  2. CONTROLLING DIMENSION: MILLIMETER.

  3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.

  4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.

  5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.

  6. 75101 THRU 75106 ARE OBSOLETE. NEW STANDARD IS 75107.

Z

PLANE


0.10 (0.004)

H D M J



0.25 (0.010)

M

Z

Y

S

X

S

SOLDERING FOOTPRINT*



1.52 0.060


7.0

0.275

4.0

0.155


0.6 0.024

1.270

( )

0.050


SCALE 6:1


mm inches

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.



HE


PIN 1 ID e



D


E


b 8 PL

Micro8 DM SUFFIX

CASE 846A02 ISSUE H


NOTES:

  1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

  2. CONTROLLING DIMENSION: MILLIMETER.

  3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED

    0.15 (0.006) PER SIDE.

  4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.


    DIM

    MILLIMETERS

    INCHES

    MIN

    NOM

    MAX

    MIN

    NOM

    MAX

    A

    −−

    −−

    1.10

    −−

    −−

    0.043

    A1

    0.05

    0.08

    0.15

    0.002

    0.003

    0.006

    b

    0.25

    0.33

    0.40

    0.010

    0.013

    0.016

    c

    0.13

    0.18

    0.23

    0.005

    0.007

    0.009

    D

    2.90

    3.00

    3.10

    0.114

    0.118

    0.122

    E

    2.90

    3.00

    3.10

    0.114

    0.118

    0.122

    e

    0.65 BSC

    0.026 BSC

    L

    0.40

    0.55

    0.70

    0.016

    0.021

    0.028

    HE

    4.75

    4.90

    5.05

    0.187

    0.193

    0.199

  5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.


    0.08 (0.003)

    M

    T

    B

    S

    A

    S



    T



    0.038 (0.0015)


    SEATING PLANE


    A


    A1 c L



    SOLDERING FOOTPRINT*

    1.04 0.38

    8X 0.041 0.015 8X


    3.20

    0.126

    4.24 0.167

    5.28 0.208


    0.65

    6X 0.0256


    SCALE 8:1


    mm inches


    ( )

    *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.


    PDIP14 CASE 64606 ISSUE R



    D A

    14 8

    H


    E1


    1 7

    NOTES:

    1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

    2. CONTROLLING DIMENSION: INCHES.

      E

    3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK- AGE SEATED IN JEDEC SEATING PLANE GAUGE GS3.

    4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH

      OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.10 INCH.

    5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C.

    6. DIMENSION E3 IS MEASURED AT THE LEAD TIPS WITH THE

      c LEADS UNCONSTRAINED.

      NOTE 8

      b2

      TOP VIEW

      B


      A2

      A

      NOTE 3

      L

      END VIEW

      WITH LEADS CONSTRAINED

      NOTE 5

    7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE LEADS, WHERE THE LEADS EXIT THE BODY.

    8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE CORNERS).



DIM

INCHES

MILLIMETERS

MIN

MAX

MIN

MAX

A

−−−−

0.210

−−−

5.33

A1

0.015

−−−−

0.38

−−−

A2

0.115

0.195

2.92

4.95

b

0.014

0.022

0.35

0.56

b2

0.060 TYP

1.52 TYP

C

0.008

0.014

0.20

0.36

D

0.735

0.775

18.67

19.69

D1

0.005

−−−−

0.13

−−−

E

0.300

0.325

7.62

8.26

E1

0.240

0.280

6.10

7.11

e

0.100 BSC

2.54 BSC

eB

−−−−

0.430

−−−

10.92

L

0.115

0.150

2.92

3.81

M

−−−−

10

−−−

10

SEATING

A1 PLANE

C M

D1

e eB


SIDE VIEW

14X b

END VIEW


0.010 M

C

A M

B M

NOTE 6


SOIC14 CASE 751A03 ISSUE K


A

D

B


14 8

A3

H E

L


NOTES:

  1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

  2. CONTROLLING DIMENSION: MILLIMETERS.

  3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION.

  4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS.


    DIM

    MILLIMETERS

    INCHES

    MIN

    MAX

    MIN

    MAX

    A

    1.35

    1.75

    0.054

    0.068

    A1

    0.10

    0.25

    0.004

    0.010

    A3

    0.19

    0.25

    0.008

    0.010

    b

    0.35

    0.49

    0.014

    0.019

    D

    8.55

    8.75

    0.337

    0.344

    E

    3.80

    4.00

    0.150

    0.157

    e

    1.27 BSC

    0.050 BSC

    H

    5.80

    6.20

    0.228

    0.244

    h

    0.25

    0.50

    0.010

    0.019

    L

    0.40

    1.25

    0.016

    0.049

    M

    0 °

    7 °

    0 °

    7 °

  5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.

1 7


0.25 M

B M

13X b

DETAIL A


0.25 M

C

A S

B S


h

A X 45 °

DETAIL A



e A1

M

C

SEATING PLANE

SOLDERING FOOTPRINT*

6.50


1


14X

1.18


1.27

PITCH


14X

0.58


DIMENSIONS: MILLIMETERS

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.



0.15 (0.006)

U S


T

L

PIN 1 IDENT.


0.15 (0.006)

U S


14X K REF


14



1


V

2X L/2

A

TSSOP14 CASE 948G ISSUE B


U S


0.25 (0.010)

V S

T

0.10 (0.004) M

N

8

M

B

U

N

7

F DETAIL E

K K1


NOTES:

  1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

  2. CONTROLLING DIMENSION: MILLIMETER.

  3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.

  4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.

  5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.

  6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.


    DIM

    MILLIMETERS

    INCHES

    MIN

    MAX

    MIN

    MAX

    A

    4.90

    5.10

    0.193

    0.200

    B

    4.30

    4.50

    0.169

    0.177

    C

    −−−

    1.20

    −−−

    0.047

    D

    0.05

    0.15

    0.002

    0.006

    F

    0.50

    0.75

    0.020

    0.030

    G

    0.65 BSC

    0.026 BSC

    H

    0.50

    0.60

    0.020

    0.024

    J

    0.09

    0.20

    0.004

    0.008

    J1

    0.09

    0.16

    0.004

    0.006

    K

    0.19

    0.30

    0.007

    0.012

    K1

    0.19

    0.25

    0.007

    0.010

    L

    6.40 BSC

    0.252 BSC

    M

    0 °

    8 °

    0 °

    8 °

  7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE W.


T

J J1


C


SECTION NN


W


0.10 (0.004)

T

D

G

SEATING PLANE

H DETAIL E

SOLDERING FOOTPRINT

7.06


1


0.65

PITCH


14X

0.36


Micro8 is a trademark of International Rectifier.


14X

1.26


DIMENSIONS: MILLIMETERS


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