Published October 7, 2019 | Version v1
Poster Open

Characterization of wafer-scale CVD graphene grown on sapphire and SiC: a direct comparison

  • 1. Faculty of Physics, Warsaw University of Technology
  • 2. AIXTRON Ltd.
  • 3. ENT SA by VIGO


Graphene grown on dielectric substrates is posed to have awide range of application, including electronics industry oras a growth template for 2D heterostructures. Among insulating substrates for graphene growth, sapphire and SiC are the most promising [1,2]. SiC is widely recognized as a substrate for the growth of high quality graphene suitable for electronics due to its excellent mobility [3]. However, the potential of sapphire, which is more affordable than SiC, is yet to be fully unveiled [4]. In this study, we compare (by means of AFM, Raman and Hall measurements) graphen e on sapphire and SiC grown at the same process conditions. We show significant differences between substrates and suggest potential areas of applications.



Files (1.7 MB)

Name Size Download all
1.7 MB Preview Download

Additional details


Car2TERA – Terahertz sensors and networks for next generation smart automotive electronic systems 824962
European Commission