DEVELOPMENT OF ERROR DETECTION AND CORRECTION CODE TECHNIQUES IN MEMORY APPLICATIONS

Temporary errors which are classified under soft errors are created because of fluctuations in the voltage or external radiations. These errors are very common and obvious in memories. In this paper, Diagonal Hamming based multi-bit error detection and correction technique is proposed to identify errors 1 bit error for one row, the extension for this SEC-DED-DAEC has been done to get the adjacent errors   of 8 bit are correctable. By using this method, high code rate is achieved with less area and delay when in contrast to various techniques. On behalf of technology scaling, on-chip memories in a die undergoes bit errors because of single events or multiple cell upsets by the ecological factors such as cosmic radiation, alpha, neutron particles or due to maximum temperature in space, leads to data corruption. Error detection and correction techniques (ECC) recognize and rectify the corrupted data over communication channel. In this paper, an advanced error correction 2-dimensional code based on divide-symbol is proposed to weaken radiation-induced MCUs in memory for space applications. For encoding data bits, diagonal bits, parity bits and check bits were analyzed by XOR operation. To recover the data, again XOR operation was performed between the encoded bits and the recalculated encoded bits. After analyzing, verification, selection and correction process takes place. The proposed scheme was simulated and synthesized using Xilinx Vivado implemented in Verilog HDL. Compared with the well known existing methods, this encoding-decoding process consumes low power and occupies minimum area and delay.